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IXTA3N100D2HV

IXYS Corporation

IXTA3N100D2HV by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSSO-G2; Maximum Time At Peak Reflow Temperature (s): 10;

Median Price

$6.330

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 268 parts In-Stock

1+ parts

$6.330

100+ parts

$3.150

1k+ parts

$3.090

10k+ parts

-

268

$6.330

$3.150

$3.090

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.892

100+ parts

-

1k+ parts

-

10k+ parts

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10

$2.892

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-

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Vyrian

USA . 312 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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312

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 50 parts In-Stock

1+ parts

$2.892

100+ parts

-

1k+ parts

-

10k+ parts

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50

$2.892

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Ampacity Inc.

Singapore . 152 parts In-Stock

1+ parts

$5.220

100+ parts

-

1k+ parts

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152

$5.220

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AZTECH Wire

Italy . 406 parts In-Stock

1+ parts

$5.966

100+ parts

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1k+ parts

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406

$5.966

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Microchip USA

USA . 8,183 parts In-Stock

1+ parts

$15.428

100+ parts

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1k+ parts

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10k+ parts

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8,183

$15.428

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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12,000

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Technical Specifications

Power Field Effect Transistors (FET) IXTA3N100D2HV attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

DRAIN

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTA3N100D2HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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