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IXFN82N60Q3

IXYS Corporation

IXFN82N60Q3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Case Connection: ISOLATED; Terminal Position: UPPER;

Median Price

$57.890

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 300 parts In-Stock

1+ parts

$57.890

100+ parts

$47.360

1k+ parts

-

10k+ parts

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300

$57.890

$47.360

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Future Electronics

Canada . 210 parts In-Stock

1+ parts

-

100+ parts

$47.290

1k+ parts

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10k+ parts

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210

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$47.290

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Verical

USA . 130 parts In-Stock

1+ parts

-

100+ parts

$63.241

1k+ parts

$60.977

10k+ parts

-

130

-

$63.241

$60.977

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 1 parts In-Stock

1+ parts

$79.964

100+ parts

-

1k+ parts

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10k+ parts

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1

$79.964

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,602 parts In-Stock

1+ parts

$138.437

100+ parts

-

1k+ parts

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10k+ parts

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3,602

$138.437

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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12,000

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Perfect Parts

USA . 167 parts In-Stock

1+ parts

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167

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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Technical Specifications

Power Field Effect Transistors (FET) IXFN82N60Q3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Avalanche Energy Rating (EAS):

4000 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

66 A

Maximum Drain Current (ID):

66 A

Maximum Drain-Source On Resistance:

.0075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

240 A

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFN82N60Q3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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