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IXFH20N100P

IXYS Corporation

IXFH20N100P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 660 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 20 A;

Median Price

$14.590

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 178 parts In-Stock

1+ parts

$14.580

100+ parts

-

1k+ parts

$7.530

10k+ parts

-

178

$14.580

-

$7.530

-

DigiKey

USA . 72 parts In-Stock

1+ parts

$14.600

100+ parts

$8.924

1k+ parts

$7.538

10k+ parts

-

72

$14.600

$8.924

$7.538

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 289 parts In-Stock

1+ parts

$13.880

100+ parts

-

1k+ parts

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289

$13.880

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NAC Semi

USA . 289 parts In-Stock

1+ parts

-

100+ parts

$30.430

1k+ parts

$27.660

10k+ parts

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289

-

$30.430

$27.660

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$2.721

100+ parts

-

1k+ parts

$2.612

10k+ parts

$2.612

50

$2.721

-

$2.612

$2.612

Ampacity Inc.

Singapore . 96 parts In-Stock

1+ parts

$7.610

100+ parts

-

1k+ parts

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10k+ parts

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96

$7.610

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Component Stockers USA

USA . 2 parts In-Stock

1+ parts

$14.060

100+ parts

-

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2

$14.060

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Microchip USA

USA . 9,436 parts In-Stock

1+ parts

$37.240

100+ parts

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9,436

$37.240

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iodParts Technologies Inc.

India . 50,000 parts In-Stock

1+ parts

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50,000

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Perfect Parts

USA . 370 parts In-Stock

1+ parts

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370

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Authorized Procurement Solutions

USA . 56 parts In-Stock

1+ parts

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56

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Technical Specifications

Power Field Effect Transistors (FET) IXFH20N100P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

800 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.57 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

50 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFH20N100P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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