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1N5710B

International Semiconductor

1N5710B by International Semiconductor

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Resion

USA . 10 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10

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Technical Specifications

Varactor Diodes 1N5710B attributes and parameters. Explore more Varactor Diodes devices from International Semiconductor

Specs

Additional Features:

HIGH VOLTAGE

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

5 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

100 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

150

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

1N5710B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

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