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IRLS4030TRRPBF

International Rectifier

IRLS4030TRRPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 370 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 305 mJ;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 979 parts In-Stock

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979

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Vyrian

USA . 307 parts In-Stock

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307

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 21,505 parts In-Stock

1+ parts

$0.776

100+ parts

$0.745

1k+ parts

$0.714

10k+ parts

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21,505

$0.776

$0.745

$0.714

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Corphita

USA . 648 parts In-Stock

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648

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Technical Specifications

Power Field Effect Transistors (FET) IRLS4030TRRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

305 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

180 A

Maximum Drain Current (ID):

180 A

Maximum Drain-Source On Resistance:

.0043 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

730 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLS4030TRRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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