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IRL3715ZS

International Rectifier

IRL3715ZS by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Pulsed Drain Current (IDM): 200 A; Maximum Drain Current (ID): 30 A;

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USA . 20,000 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,742 parts In-Stock

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Assy Fe

Spain . 1,500 parts In-Stock

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GreenTree Electronics

Israel . 1,267 parts In-Stock

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Alle Elektronik GmbH

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Microchip USA

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Technical Specifications

Power Field Effect Transistors (FET) IRL3715ZS attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

44 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

30 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

200 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRL3715ZS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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