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IRFHS9301TR2PBF

International Rectifier

IRFHS9301TR2PBF by International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .037 ohm;

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USA . 148 parts In-Stock

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148

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Modulus Dynamics

Lithuania . 1,951 parts In-Stock

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$1.033

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$0.990

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1,951

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Component Stockers USA

USA . 636 parts In-Stock

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$99.990

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636

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Glotronic Ltd.

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) IRFHS9301TR2PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.037 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

52 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFHS9301TR2PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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