Loading...

IRFH5004TR2PBF

International Rectifier

IRFH5004TR2PBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Bristol Electronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

Bas Electronics GmbH & Co. KG

Germany . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 39,981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39,981

-

-

-

-

Kepictronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Glotronic Ltd.

UK . 1,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,965

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) IRFH5004TR2PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

340 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

100 A

Maximum Drain Current (ID):

28 A

Maximum Drain-Source On Resistance:

.0026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

400 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFH5004TR2PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.