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IRFB4321GPBF

International Rectifier

IRFB4321GPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 83 A;

Median Price

$3.850

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 92 parts In-Stock

1+ parts

$3.850

100+ parts

$2.880

1k+ parts

$2.500

10k+ parts

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92

$3.850

$2.880

$2.500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,594 parts In-Stock

1+ parts

$38.050

100+ parts

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1,594

$38.050

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A-Z Elektronik GmbH

Germany . 6,407 parts In-Stock

1+ parts

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6,407

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 4,271 parts In-Stock

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4,271

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Microchip USA

USA . 442 parts In-Stock

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442

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Perfect Parts

USA . 168 parts In-Stock

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168

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Technical Specifications

Power Field Effect Transistors (FET) IRFB4321GPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

120 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

83 A

Maximum Drain Current (ID):

83 A

Maximum Drain-Source On Resistance:

.015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

330 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFB4321GPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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