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IRF7478QPBF

International Rectifier

IRF7478QPBF by International Rectifier

IRF7478QPBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 56A IDM and 0.026 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for high-power electronic devices.

Median Price

$0.530

Lifecycle Status

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4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.530

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Vyrian

USA . 750 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 285 parts In-Stock

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Holdelec - ElecDif-Pro

France . 7 parts In-Stock

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Argo Parts USA

USA . 4,414 parts In-Stock

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$0.520

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$0.504

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Continental Prestige Electronics

USA . 2,145 parts In-Stock

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$0.520

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$0.510

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Netroflash

USA . 500 parts In-Stock

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$0.530

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Corohmni

South Africa . 966 parts In-Stock

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$0.968

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Aztec Data Supply Inc.

USA . 2,291 parts In-Stock

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$1.120

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AZTECH Wire

Italy . 567 parts In-Stock

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$18.049

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Ampacity Inc.

Singapore . 795 parts In-Stock

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$31.050

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Kepictronics

USA . 7,471 parts In-Stock

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RC Electronics

USA . 5,120 parts In-Stock

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$0.550

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A-Z Elektronik GmbH

Germany . 2,841 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,894 parts In-Stock

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Overview

Discover the IRF7478QPBF by International Rectifier, a high-quality N-CHANNEL Small Signal Field Effect Transistor with a built-in diode that is perfect for switching applications. With its robust design and reliable performance, this transistor offers customers unparalleled value and benefits. Whether you're looking to enhance your electronic devices or improve efficiency in your projects, the IRF7478QPBF is the solution you need. Upgrade your technology with this top-of-the-line FET and experience the advantages of International Rectifier's innovative products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Offers efficient flow of current in one direction, making it suitable for many electronic applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for reverse current protection, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed for fast switching applications, providing high performance in electronic circuits.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltage environments, ensuring stability and safety in various circuit designs.

Package Shape: RECTANGULAR

Offers a compact and efficient form factor for easy integration into circuit layouts.

Terminal Form: GULL WING

Allows for secure and reliable connections during soldering, ensuring consistent performance.

Operating Mode: ENHANCEMENT MODE

Enables precise control of the transistor's conductive state, improving efficiency in electronic circuits.

Maximum Pulsed Drain Current (IDM): 56 A

Capable of handling high current pulses, making it suitable for power switching applications.

Avalanche Energy Rating (EAS): 140 mJ

Provides protection against voltage spikes and energy surges, enhancing the robustness of the transistor.

No. of Terminals: 8

Offers multiple connection points for versatile circuit configurations and compatibility.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving integration and ease of PCB layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced semiconductor technology for efficient signal amplification and control.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, ensuring reliability in various electronic applications.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and stability for consistent performance.

Terminal Finish: MATTE TIN OVER NICKEL

Durable finish for reliable soldering connections and long-term performance.

Maximum Drain Current (ID): 7 A

Capable of handling high continuous currents for sustained performance in electronic circuits.

Maximum Drain-Source On Resistance: 0.026 ohm

Low on-resistance for efficient power handling and minimal heat dissipation.

Terminal Position: DUAL

Dual terminal position for versatile PCB mounting options and flexibility in circuit design.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRF7478QPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

140 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

56 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF7478QPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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