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IRF644-030PBF

International Rectifier

IRF644-030PBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Minimum DS Breakdown Voltage: 250 V; JEDEC-95 Code: TO-220AB;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 68,326 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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68,326

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Technical Specifications

Power Field Effect Transistors (FET) IRF644-030PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

550 mJ

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.28 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

125 W

Maximum Pulsed Drain Current (IDM):

56 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF644-030PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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