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IRF1404STRR

International Rectifier

IRF1404STRR by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 519 mJ;

Median Price

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Lifecycle Status

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1

In-Stock Inventory

< 1k

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Bristol Electronics

USA . 225 parts In-Stock

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225

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Distributors (Availability)

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Component Stockers USA

USA . 471 parts In-Stock

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$99.990

100+ parts

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10k+ parts

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471

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,886 parts In-Stock

1+ parts

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100+ parts

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28,886

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Microchip USA

USA . 4,498 parts In-Stock

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4,498

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Technical Specifications

Power Field Effect Transistors (FET) IRF1404STRR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Avalanche Energy Rating (EAS):

519 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

162 A

Maximum Drain Current (ID):

75 A

Maximum Drain-Source On Resistance:

.004 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

650 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF1404STRR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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