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TD430N22KOFHPSA2

Infineon Technologies

TD430N22KOFHPSA2 by Infineon Technologies

Infineon's TD430N22KOFHPSA2 is a 5-terminal SCR with 2200V repetitive peak reverse voltage and 800A max RMS on-state current. Its single configuration with built-in diode makes it ideal for high-power applications requiring reliable switching capabilities. The device, featuring a flange mount package style, is commonly used in industrial equipment and power control systems.

Median Price

$268.760

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1 parts In-Stock

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$268.760

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1

$268.760

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Distributors (In-Stock)

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Vyrian

USA . 3,241 parts In-Stock

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3,241

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Digiode

USA . 311 parts In-Stock

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311

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 3,670 parts In-Stock

1+ parts

$4.374

100+ parts

$4.199

1k+ parts

$4.024

10k+ parts

-

3,670

$4.374

$4.199

$4.024

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Microchip USA

USA . 6,888 parts In-Stock

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$553.635

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6,888

$553.635

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Corphita

USA . 470 parts In-Stock

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470

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Overview

Unleash the power of innovation with the TD430N22KOFHPSA2 by Infineon Technologies. As a leader in the industry, Infineon Technologies guarantees top-notch quality and reliability. This Silicon Controlled Rectifier (SCR) offers unparalleled performance and versatility in a multitude of applications. With its high maximum DC Gate Trigger Current and impressive Repetitive Peak Reverse Voltage, this SCR is designed to meet the demands of today's technology-driven world. Experience the value and benefits that come with choosing the TD430N22KOFHPSA2 for your next project. Elevate your performance with Infineon Technologies.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 250 mA

Low gate trigger current ensures efficient operation and reliable performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and enhances functionality.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various systems.

Repetitive Peak Reverse Voltage: 2200 V

High reverse voltage rating provides robust protection and durability.

No. of Terminals: 5

Multiple terminals offer flexibility in connection options and circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount design enables secure and stable installation in industrial applications.

Trigger Device Type: SCR

SCR (Silicon Controlled Rectifier) technology ensures precise and reliable switching performance.

Maximum RMS On-state Current: 800 A

High on-state current handling capability allows for heavy-duty applications and high power loads.

Case Connection: ISOLATED

Isolated case connection enhances safety by preventing electrical leakage and interference.

Repetitive Peak Off-state Voltage: 2200 V

High off-state voltage rating provides excellent insulation and protection against voltage spikes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TD430N22KOFHPSA2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Case Connection:

Maximum DC Gate Trigger Current:

250 mA

JESD-30 Code:

R-XXFM-X5

No. of Elements:

1

No. of Terminals:

5

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

800 A

Repetitive Peak Off-state Voltage:

2200 V

Repetitive Peak Reverse Voltage:

2200 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TD430N22KOFHPSA2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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