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T720N16TOF

Infineon Technologies

T720N16TOF by Infineon Technologies

T720N16TOF by Infineon Technologies is a SINGLE SCR with a Max On-state Current of 720A and Repetitive Peak Reverse Voltage of 1600V. It is used in applications requiring high power control such as industrial motor drives, power supplies, and welding equipment.

Median Price

$146.060

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 86 parts In-Stock

1+ parts

$146.060

100+ parts

-

1k+ parts

-

10k+ parts

-

86

$146.060

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-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 280 parts In-Stock

1+ parts

$139.289

100+ parts

-

1k+ parts

-

10k+ parts

-

280

$139.289

-

-

-

Vyrian

USA . 669 parts In-Stock

1+ parts

$146.620

100+ parts

-

1k+ parts

-

10k+ parts

-

669

$146.620

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 625 parts In-Stock

1+ parts

$4.777

100+ parts

$4.586

1k+ parts

$4.395

10k+ parts

-

625

$4.777

$4.586

$4.395

-

Corphita

USA . 941 parts In-Stock

1+ parts

$131.958

100+ parts

-

1k+ parts

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10k+ parts

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941

$131.958

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-

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Overview

Unlock the power of innovation with the T720N16TOF by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Silicon Controlled Rectifiers (SCR) that provide unparalleled performance and reliability. From industrial applications to consumer electronics, this SCR offers maximum on-state current of 720A and non-repetitive peak on-state current of 14500A, making it ideal for a wide range of uses. Trust in Infineon to enhance your products with advanced technology and unmatched value.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 250 mA

Higher gate trigger current allows for more precise control over the switching of the SCR, increasing efficiency and reliability.

Non Repetitive Peak On-state Current: 14500 A

The high peak on-state current capability makes this SCR suitable for applications requiring high power handling capacity.

Maximum On-state Current: 720 A

The high on-state current rating ensures that the SCR can handle large current loads without issues.

Maximum Leakage Current: 80 mA

Low leakage current helps in reducing power consumption and improving the overall efficiency of the circuit.

Repetitive Peak Reverse Voltage: 1600 V

The high reverse voltage rating ensures protection against voltage spikes and surges in the circuit.

Maximum RMS On-state Current: 1650 A

The high RMS on-state current rating indicates that the SCR can handle continuous current flow without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage makes the SCR easy to control and trigger.

Maximum Holding Current: 300 mA

The holding current determines the minimum current required to keep the SCR latched in the on-state, ensuring stability in operation.

Nominal Circuit Commutated Turn-off Time: 250 us

Fast turn-off time allows for quick response and switching of the SCR, reducing power losses and improving efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) T720N16TOF attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Nominal Circuit Commutated Turn-off Time:

250 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

250 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

300 mA

JESD-30 Code:

O-XXDB-X3

Maximum Leakage Current:

80 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

14500 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

720 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

1650 A

Repetitive Peak Off-state Voltage:

1600 V

Repetitive Peak Reverse Voltage:

1600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

T720N16TOF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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