Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon Technologies' IPP200N15N3GXKSA1 is a power FET with N-channel configuration and a min DS breakdown voltage of 150V. It is designed for switching applications, offering a max pulsed drain current of 200A and an avalanche energy rating of 170mJ.
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. This material ensures durability and protection for the power FET, making it highly reliable for various applications.
. The N-channel design allows for efficient current flow, making this power FET suitable for high-performance switching purposes.
. The built-in diode simplifies circuit integration and improves the overall efficiency of the power FET, making it a convenient choice for switching applications.
. With its switching capabilities, this power FET is highly suitable for applications that require precise control and efficient switching of high currents.
. The high breakdown voltage ensures a reliable and safe operation of the power FET, making it suitable for demanding tasks that involve higher voltage levels.
. The rectangular shape enables easier integration and mounting, providing convenience for circuit layouts and space-saving designs.
. The through-hole terminal form allows for easy and secure soldering, ensuring a robust connection for enhanced reliability and performance.
. The enhancement mode design allows for precise control and lower power consumption, making this power FET ideal for applications that require efficient energy management.
. This power FET comprises a single element, simplifying circuit design and reducing complexity, which contributes to better overall efficiency.
. The high pulsing capacity of this power FET ensures its suitability for applications that require handling sudden current surges, providing robust performance.
. With a high avalanche energy rating, this power FET can withstand energy surges, making it reliable and durable in applications subject to transient events.
. The ability to handle high drain currents reliably makes this power FET suitable for applications demanding efficient power control and distribution.
. This power FET has three terminals, allowing for easy and secure connections in circuits, providing stability and reliability during operation.
. The high power dissipation rating ensures this power FET can efficiently handle and dissipate heat generated during operation, increasing its overall reliability.
. The flange mount package style offers stable and secure mounting, allowing for efficient heat dissipation and providing mechanical stability for critical applications.
. This advanced technology offers superior performance and lower power consumption, making this power FET an excellent choice for energy-efficient applications.
. The high maximum operating temperature rating ensures reliability and performance even under demanding conditions, making this power FET suitable for robust applications.
. The silicon element material contributes to the power FET's overall reliability, performance, and efficiency, making it a dependable choice for a range of applications.
. The tin terminal finish provides reliable solderability, enhancing the power FET's overall connectivity and ensuring a robust electrical connection in various environments.
. The ability to support high drain currents makes this power FET suitable for applications requiring efficient power distribution and control.
. With a low drain-source resistance, this power FET minimizes power loss and improves overall efficiency, making it suitable for applications demanding high performance and power handling.
. The single terminal position simplifies installation and connections, providing ease of use and enhancing the power FET's overall reliability and convenience.
Power Field Effect Transistors (FET) IPP200N15N3GXKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IPP200N15N3GXKSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Other - Multiple Changes 09/Jul/2014
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CMX
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
1N4148
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ATMEGA328P-AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
CRCW040210K0FKED
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
M24308/2-1F
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
Fairchild Semiconductor
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
2N7002
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
Toshiba
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Changzhou Galaxy Century Microelectronics
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
RFD16N05LSM9A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JEDEC-95 Code: TO-252AA; Terminal Form: GULL WING;
FQD17P06TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; JESD-609 Code: e3; Case Connection: DRAIN;
ZVN2110GTA
Diodes Incorporated
ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.
IRFZ44NSTRLPBF
Infineon Technologies
IRFZ44NSTRLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). With a max power dissipation of 94W and operating temp of 175°C, it's suitable for high-power circuits requiring fast switching capabilities.
IRFR9024NTRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (Abs) (ID): 11 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF9530
Vishay Intertechnology's IRF9530 is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max IDM of 48A and EAS of 400mJ, making it suitable for high-power operations. With a max power dissipation of 88W and operating temp up to 150°C, it offers reliable performance in various environments.
IRLML6402TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 by Infineon is a N-CHANNEL FET with 80V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 66W. This MOSFET has a drain-source on resistance of 0.0123 ohm and can handle up to 150°C operating temperature.
ZXMP10A18GTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IRF3205PBF
IRF3205PBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 390A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE. With 0.008 ohm RDS(on), it can handle up to 75A ID current efficiently.
IRF640SPBF
Vishay Intertechnology's IRF640SPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W.
FQD7P20TM
FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
DMG2301L-7
DMG2301L-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 10A IDM for switching applications. It operates in enhancement mode, has a max power dissipation of 1.5W, and features a 0.12 ohm drain-source resistance. Ideal for small outline packages with dual terminals, it can withstand temperatures from -55 to 150°C.
NCV8406ASTT1G
NCV8406ASTT1G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in temperatures from -40 to 150 °C.
IRLML2244TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IRLML0030TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
AUIRFR5305TR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Drain-Source On Resistance: .065 ohm; JEDEC-95 Code: TO-252AA;
IRFR4620TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
SI7155DP-T1-GE3
Vishay Intertechnology's SI7155DP-T1-GE3 is a P-channel FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W. The MOSFET features a drain-source on resistance of 0.0046 ohm and can withstand temperatures from -55 to 150°C.
G3R450MT17D
Genesic Semiconductor
Power Field-Effect Transistors;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
FDD86250
FDD86250 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 40A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.022 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE.
IPP200N25N3GXKSA1
IPP200N25N3GXKSA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. It features 256A IDM and 0.02 ohm Drain-Source On Resistance, operating in ENHANCEMENT MODE at up to 175°C. The transistor has a built-in diode, through-hole terminals, and offers an EAS of 320mJ for robust performance.
IPP220N25NFDAKSA1
IPP220N25NFDAKSA1 by Infineon Technologies is a N-CHANNEL FET with 250V DS Breakdown Voltage. It has 244A IDM and 0.022 ohm Drain-Source On Resistance, suitable for power applications requiring high current handling capabilities. The transistor's METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE operation make it ideal for industrial equipment and power supplies.
IPP260N06N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 108 A;
IPP260N06N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;
IPP22N03S4L15AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 22 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
IPP230N06L3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
IPP26CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Application: SWITCHING;
IPP230N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
IPP230N06L3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
IPP220N25NFD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 250 V; Package Body Material: PLASTIC/EPOXY;
IPP25N06S3-25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 55 V;
IPP25N06S3L22AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 120 mJ; Package Body Material: PLASTIC/EPOXY;
IPP22N03S4L-15
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; No. of Terminals: 3; Peak Reflow Temperature (C): NOT SPECIFIED;
IPP260N06N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; JESD-30 Code: R-PSFM-T3;
IPP200N25N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Minimum Operating Temperature: -55 Cel;
IPP200N15N3GHKSA1
IPP200N15N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Package Body Material: PLASTIC/EPOXY;
IPP25N06S3L-21
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 25 A;
IPP25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
Supply Digital Components
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Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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