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IPLU250N04S41R7XTMA1

Infineon Technologies

IPLU250N04S41R7XTMA1 by Infineon Technologies

Infineon IPLU250N04S41R7XTMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage and 1000A IDM. Ideal for automotive applications due to AEC-Q101 standard compliance, -55°C Min Operating Temp, and 170mJ EAS rating. Features include 0.0012 ohm Max RDS(on), SINGLE configuration, and built-in diode.

Median Price

$1.387

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,000 parts In-Stock

1+ parts

$1.381

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$1.381

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DigiKey

USA . 2,000 parts In-Stock

1+ parts

$3.740

100+ parts

$1.716

1k+ parts

$1.515

10k+ parts

$1.238

2,000

$3.740

$1.716

$1.515

$1.238

Mouser Electronics

USA . 1,069 parts In-Stock

1+ parts

$3.750

100+ parts

$1.750

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$1.420

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1,069

$3.750

$1.750

$1.420

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Rochester

USA . 295,457 parts In-Stock

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$1.240

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$1.110

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$1.040

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$1.110

$1.040

Verical

USA . 249,751 parts In-Stock

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$1.387

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$1.300

249,751

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$1.300

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Digiode

USA . 255 parts In-Stock

1+ parts

$1.311

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255

$1.311

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Nova Conductors

Japan . 89 parts In-Stock

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$2.140

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89

$2.140

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Vyrian

USA . 70,281 parts In-Stock

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Ampacity Inc.

Singapore . 70,563 parts In-Stock

1+ parts

$1.170

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70,563

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Corphita

USA . 486 parts In-Stock

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$1.242

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486

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Aranea Global

USA . 500 parts In-Stock

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$2.097

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$2.013

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500

$2.097

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$2.013

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Modulus Dynamics

Lithuania . 15,531 parts In-Stock

1+ parts

$2.380

100+ parts

$2.285

1k+ parts

$2.190

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15,531

$2.380

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$2.190

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GreenTree Electronics

Israel . 30,144 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,429 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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Microchip USA

USA . 6,684 parts In-Stock

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Overview

Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in the specified direction, enhancing the overall performance of the transistor.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by integrating a diode within the transistor, saving space and reducing the need for additional components.

Surface Mount: YES

Facilitates easy and convenient installation onto circuit boards, making it suitable for compact electronic devices.

Maximum Pulsed Drain Current (IDM): 1000 A

Capable of handling high current loads for pulse applications, making it suitable for power-intensive processes.

Avalanche Energy Rating (EAS): 170 mJ

Withstands high-energy transients, ensuring reliable operation in challenging conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and fast switching speeds, contributing to improved performance and reduced power consumption.

Maximum Drain Current (ID): 250 A

Supports high continuous current flow, making it ideal for applications that require sustained power output.

Maximum Drain-Source On Resistance: 0.0012 ohm

Provides low ON resistance, minimizing power loss and heat generation in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) IPLU250N04S41R7XTMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

170 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

250 A

Maximum Drain-Source On Resistance:

.0012 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

1000 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

IPLU250N04S41R7XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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