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IGP01N120H2

Infineon Technologies

IGP01N120H2 by Infineon Technologies

Infineon's IGP01N120H2 is a NPN BJT transistor with 1200V VCE, 3.2A IC, and 28W Ptot. Ideal for switching applications in power electronics due to its high voltage capability and low gate-emitter threshold voltage of 3.9V. Packaged in plastic/epoxy with flange mount style for easy installation.

Median Price

$0.545

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,000 parts In-Stock

1+ parts

$0.500

100+ parts

$0.490

1k+ parts

$0.480

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13,000

$0.500

$0.490

$0.480

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DigiKey

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

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$0.590

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13,000

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-

$0.590

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Distributors (In-Stock)

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.517

100+ parts

-

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200

$0.517

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Digiode

USA . 538 parts In-Stock

1+ parts

$0.568

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538

$0.568

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Vyrian

USA . 10,412 parts In-Stock

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Zilex Electronics Inc.

Canada . 268 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 29 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,636 parts In-Stock

1+ parts

$0.500

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10,636

$0.500

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.506

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1k+ parts

$0.486

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500

$0.506

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$0.486

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Continental Prestige Electronics

USA . 4,048 parts In-Stock

1+ parts

$0.517

100+ parts

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$0.506

4,048

$0.517

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$0.506

Argo Parts USA

USA . 1,287 parts In-Stock

1+ parts

$0.517

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$0.501

1,287

$0.517

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$0.501

Corphita

USA . 683 parts In-Stock

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$0.538

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683

$0.538

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Modulus Dynamics

Lithuania . 10,012 parts In-Stock

1+ parts

$1.060

100+ parts

$1.018

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$0.975

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10,012

$1.060

$1.018

$0.975

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Microchip USA

USA . 4,799 parts In-Stock

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$3.575

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4,799

$3.575

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Andel Nordic

Denmark . 40 parts In-Stock

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$24.650

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$17.257

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$17.257

40

$24.650

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$17.257

$17.257

A-Z Elektronik GmbH

Germany . 5,312 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,541 parts In-Stock

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Perfect Parts

USA . 506 parts In-Stock

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506

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Overview

Enhance your power applications with the high-quality IGP01N120H2 by Infineon Technologies. With a focus on innovation and reliability, Infineon Technologies delivers exceptional products like this Power BJT transistor for switching applications. The IGP01N120H2 offers customers unbeatable value, benefits, and advantages, making it the ideal choice for your next project. Trust in Infineon Technologies to provide you with top-of-the-line components that will elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides good insulation and thermal properties, making the transistor durable and reliable.

Polarity or Channel Type:

NPN - NPN transistors offer high current amplification and are commonly used in switching applications.

Configuration:

SINGLE - Single configuration transistors are easy to use and suitable for simple circuit designs.

Transistor Application:

SWITCHING - Designed specifically for switching applications, ensuring efficient performance in switching circuits.

Package Shape:

RECTANGULAR - Rectangular shape allows for easy mounting and compatibility with standard electronic components.

Terminal Form:

THROUGH-HOLE - Through-hole terminals provide strong mechanical connections and ease of soldering.

No. of Terminals:

3 - Three terminals allow for easy connection to external circuits and components.

Maximum Power Dissipation (Abs):

28 W - High power dissipation capability ensures the transistor can handle high loads without overheating.

Package Style (Meter):

FLANGE MOUNT - Flange mount package style allows for easy mounting and secure installation in various applications.

Maximum Operating Temperature:

150 °C - High operating temperature range ensures stable performance in harsh environments.

Maximum Collector-Emitter Voltage:

1200 V - High voltage rating makes this transistor suitable for high voltage applications.

Transistor Element Material:

SILICON - Silicon transistors offer reliable performance and low noise in electronic circuits.

Maximum Gate-Emitter Voltage:

20 V - High gate-emitter voltage tolerance ensures reliable operation in various configurations.

Maximum Collector Current (IC):

3.2 A - High collector current rating allows for handling high current loads in circuits.

Maximum Gate-Emitter Threshold Voltage:

3.9 V - Low threshold voltage ensures fast and efficient switching in electronic circuits.

Terminal Position:

SINGLE - Single terminal position simplifies connection and integration into circuit designs.

Case Connection:

COLLECTOR - Collector case connection allows for easy heat dissipation and thermal management in high power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) IGP01N120H2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

3.9 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IGP01N120H2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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