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BSP603S2L

Infineon Technologies

BSP603S2L by Infineon Technologies

Infineon's BSP603S2L is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 21A IDM, 150mJ EAS, and 0.04ohm RDS(on). With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE up to 150°C.

Median Price

$0.812

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,425 parts In-Stock

1+ parts

$0.812

100+ parts

$0.763

1k+ parts

$0.690

10k+ parts

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1,425

$0.812

$0.763

$0.690

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RS (Exports)

UK . 5,830 parts In-Stock

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$1.284

1k+ parts

$1.099

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5,830

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$1.284

$1.099

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Avnet

USA . 1,425 parts In-Stock

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$0.730

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$0.660

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1,425

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$0.730

$0.660

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Distributors (In-Stock)

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Digiode

USA . 543 parts In-Stock

1+ parts

$0.771

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543

$0.771

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Chip Stock

USA . 34,947 parts In-Stock

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VNN

France . 5,385 parts In-Stock

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5,385

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Cyclops Electronics Ltd

UK . 3,542 parts In-Stock

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Vyrian

USA . 2,551 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,860 parts In-Stock

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Bristol Electronics

USA . 1,449 parts In-Stock

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1,449

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J2 Sourcing AB

Sweden . 320 parts In-Stock

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320

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Nova Conductors

Japan . 27 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,018 parts In-Stock

1+ parts

$0.536

100+ parts

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4,018

$0.536

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Semicontronic

India . 2,478 parts In-Stock

1+ parts

$0.620

100+ parts

$0.604

1k+ parts

$0.601

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2,478

$0.620

$0.604

$0.601

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Corphita

USA . 175 parts In-Stock

1+ parts

$0.731

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175

$0.731

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Corohmni

South Africa . 507 parts In-Stock

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$0.825

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507

$0.825

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Ampacity Inc.

Singapore . 2,779 parts In-Stock

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$1.350

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2,779

$1.350

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Modulus Dynamics

Lithuania . 17,515 parts In-Stock

1+ parts

$1.450

100+ parts

$1.392

1k+ parts

$1.334

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17,515

$1.450

$1.392

$1.334

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Kepictronics

USA . 20,500 parts In-Stock

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Lixinc

USA . 18,494 parts In-Stock

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Perfect Parts

USA . 18,256 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,102 parts In-Stock

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S.R.D Solutions

India . 5,489 parts In-Stock

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Argo Parts USA

USA . 4,483 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,242 parts In-Stock

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Futuretech Components

Singapore . 2,234 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,246 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 150 parts In-Stock

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Overview

Unlock the potential of your power management systems with the BSP603S2L by Infineon Technologies. Crafted with precision and expertise, this N-CHANNEL Power Field Effect Transistor boasts a single configuration with a built-in diode for seamless switching applications. Ideal for enhancing performance in various electronic devices, this transistor offers a maximum pulsated drain current of 21A and an impressive minimum DS breakdown voltage of 55V. Experience the reliability and efficiency of this product, designed to exceed your expectations. Elevate your projects with the BSP603S2L and enjoy enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures the longevity and portability of the product.

Polarity or Channel Type: N-CHANNEL

Efficient N-channel type for better performance and conductivity.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient built-in diode for easy circuit integration and functionality.

Transistor Application: SWITCHING

Ideal for switching applications, making it versatile for various uses.

Surface Mount: YES

Surface mount capability for easy installation and space-saving design.

Package Shape: RECTANGULAR

Rectangular shape for easy fitting and integration into circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode for improved efficiency and performance.

Maximum Pulsed Drain Current (IDM): 21 A

High maximum pulsed drain current for handling heavy loads and surge currents.

Avalanche Energy Rating (EAS): 150 mJ

High avalanche energy rating for protection against power surges and spikes.

Maximum Drain Current (Abs) (ID): 5.2 A

Decent maximum drain current for reliable operation and functionality.

Maximum Power Dissipation (Abs): 1.8 W

Efficient power dissipation to prevent overheating and ensure stable performance.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style for space-saving and efficient circuit design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Advanced MOSFET technology for high switching speeds and low power consumption.

Maximum Operating Temperature: 150 °C

High maximum operating temperature for reliable performance in various environments.

Transistor Element Material: SILICON

Durable silicon material for stable and consistent transistor performance.

Terminal Finish: TIN

Tin terminal finish for good conductivity and corrosion resistance.

Maximum Drain-Source On Resistance: 0.04 ohm

Low drain-source on resistance for efficient power transfer and minimal power loss.

Terminal Position: DUAL

Dual terminal position for versatile and flexible circuit integration.

Moisture Sensitivity Level (MSL): 3

Moderate moisture sensitivity level for durability and reliability in different environments.

Case Connection: DRAIN

Drain case connection for ease of installation and maintenance.

Peak Reflow Temperature °C: 260

High peak reflow temperature for secure soldering and reliable circuit connection.

Technical Specifications

Power Field Effect Transistors (FET) BSP603S2L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

150 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

5.2 A

Maximum Drain Current (ID):

5.2 A

Maximum Drain-Source On Resistance:

.04 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

21 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP603S2L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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