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BSO220N03MDG

Infineon Technologies

BSO220N03MDG by Infineon Technologies

Infineon BSO220N03MDG is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 6A Drain Current, 0.022 ohm On Resistance, and 2W Power Dissipation. With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE up to 150°C.

Median Price

$1.220

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 19,448 parts In-Stock

1+ parts

$1.220

100+ parts

$0.496

1k+ parts

$0.347

10k+ parts

$0.286

19,448

$1.220

$0.496

$0.347

$0.286

Distributors (In-Stock)

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Digiode

USA . 774 parts In-Stock

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$0.846

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774

$0.846

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Vyrian

USA . 20,055 parts In-Stock

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20,055

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Flip Electronics

USA . 7,500 parts In-Stock

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7,500

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Cyclops Electronics Ltd

UK . 3,141 parts In-Stock

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3,141

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Rutronik

Germany . 2,500 parts In-Stock

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$0.246

2,500

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$0.246

VNN

France . 798 parts In-Stock

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798

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Ampacity Inc.

Singapore . 19,930 parts In-Stock

1+ parts

$0.760

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$0.760

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Corphita

USA . 665 parts In-Stock

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$0.801

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665

$0.801

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Modulus Dynamics

Lithuania . 9,010 parts In-Stock

1+ parts

$1.703

100+ parts

$1.635

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$1.567

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9,010

$1.703

$1.635

$1.567

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 20,000 parts In-Stock

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Kepictronics

USA . 13,876 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,250 parts In-Stock

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Perfect Parts

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Lixinc

USA . 2,837 parts In-Stock

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Continental Prestige Electronics

USA . 2,524 parts In-Stock

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Argo Parts USA

USA . 1,838 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Enhance your electronic devices with the BSO220N03MDG by Infineon Technologies. This high-quality Small Signal Field Effect Transistor offers unmatched performance and reliability, perfect for switching applications. With its N-CHANNEL configuration and built-in diode, this transistor provides seamless operation and efficient power management. Experience the benefits of Infineon Technologies' expertise in semiconductor technology, delivering top-notch products that guarantee superior functionality. Upgrade your designs with the BSO220N03MDG and unlock a world of possibilities in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, ensuring long-term performance and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and higher electron mobility compared to P-channel transistors, making them ideal for high-speed switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode allows for efficient control and protection in circuit applications, enhancing overall functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation, making it an excellent choice for various electronic circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the transistor onto a PCB, saving space and improving overall circuit performance.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages, providing reliable operation in a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration into circuit designs and allows for efficient use of board space.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low gate leakages, providing precise control and efficient operation in electronic circuits.

Maximum Drain Current (Abs) (ID): 6 A

With a maximum drain current of 6A, this transistor can handle high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 2 W

The maximum power dissipation of 2W ensures that the transistor can handle heat dissipation effectively, preventing thermal issues and ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compact size and efficient thermal dissipation, making it ideal for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance, low power consumption, and reliable operation, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring stable performance under varying conditions.

Transistor Element Material: SILICON

Silicon-based transistors offer high power handling capability, low leakage currents, and excellent thermal stability, making them a reliable choice for electronic circuits.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring reliable connections in circuit applications.

Maximum Drain-Source On Resistance: 0.022 ohm

The low drain-source on resistance of 0.022 ohms reduces power losses and improves efficiency in switching applications, making this transistor an excellent choice for high-performance circuits.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and easy integration into circuit designs, enhancing versatility and usability.

Moisture Sensitivity Level (MSL): 3

Moisture sensitivity level 3 indicates that the transistor can withstand moderate exposure to moisture during storage and assembly, ensuring long-term reliability in varying environmental conditions.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliable solder joints and consistent performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSO220N03MDG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

5.8 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSO220N03MDG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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