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BSO150N03MDG

Infineon Technologies

BSO150N03MDG by Infineon Technologies

Infineon's BSO150N03MDG is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 8A Drain Current, and 0.015 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it suits various small outline surface mount designs.

Median Price

$1.640

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,614 parts In-Stock

1+ parts

$1.640

100+ parts

$0.665

1k+ parts

$0.476

10k+ parts

$0.382

2,614

$1.640

$0.665

$0.476

$0.382

Distributors (In-Stock)

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Digiode

USA . 684 parts In-Stock

1+ parts

$1.064

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-

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684

$1.064

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Vyrian

USA . 697 parts In-Stock

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$1.120

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697

$1.120

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Sea View Technologies

USA . 1,199 parts In-Stock

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1,199

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Component Sense

UK . 828 parts In-Stock

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828

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LIBRA Elektronik GmbH

Germany . 185 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 564 parts In-Stock

1+ parts

$1.008

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564

$1.008

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Modulus Dynamics

Lithuania . 3,025 parts In-Stock

1+ parts

$1.662

100+ parts

$1.596

1k+ parts

$1.529

10k+ parts

-

3,025

$1.662

$1.596

$1.529

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Native Components

USA . 806 parts In-Stock

1+ parts

$7.755

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806

$7.755

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 25,477 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,749 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Kepictronics

USA . 7,500 parts In-Stock

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Perfect Parts

USA . 6,300 parts In-Stock

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Northwest PG Solutions

USA . 857 parts In-Stock

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$7.600

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857

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$7.600

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Lixinc

USA . 795 parts In-Stock

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795

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Speed Components Ltd (Excess)

Israel . 80 parts In-Stock

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80

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Overview

Unlock the power of high-quality performance with the BSO150N03MDG by Infineon Technologies. As a leading manufacturer in the industry, Infineon brings you small signal field effect transistors that excel in switching applications. With a robust design and built-in diode, this N-channel transistor offers enhanced efficiency and reliability. Experience seamless operation and maximum power dissipation with this product's low on-resistance and high drain current capacity. Elevate your projects with the BSO150N03MDG and enjoy unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used for switching applications due to their high efficiency.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode allows for more versatile circuit designs and applications.

Transistor Application: SWITCHING

Ideal for applications where high-speed switching is required.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control of the current flow.

Maximum Drain Current (Abs) (ID): 8 A

High maximum drain current allows for handling of larger loads.

Maximum Power Dissipation (Abs): 2 W

Efficient power dissipation ensures the transistor does not overheat during operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and reliability.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSO150N03MDG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSO150N03MDG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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