Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Terminal Position: BOTTOM; Operating Mode: ENHANCEMENT MODE;
Median Price
$1.313
Lifecycle Status
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5
In-Stock Inventory
1k+
Rochester
1+ parts
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100+ parts
$1.270
1k+ parts
$1.050
10k+ parts
$0.940
DigiKey
$1.590
Verical
$1.175
Digiode
$0.988
Vyrian
$1.040
Modulus Dynamics
$0.933
$0.896
$0.858
Corphita
$0.936
Component Stockers USA
$1.060
$1.000
$0.900
Microchip USA
$6.500
Native Components
$32.324
$31.031
Northwest PG Solutions
$35.556
Andel Nordic
$38.720
$27.107
Perfect Parts
Kepictronics
Power Field Effect Transistors (FET) BSB012N03LX3G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
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BSB012N03LX3G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
LL4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1554216004
Molex
WIRE AND CABLE;
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Minimum Input-Output Voltage Differential: 3 V;
MBRA340T3G
Onsemi
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
BAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Taitron Components
Plessey Semiconductors Discrete Components Div
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
Infinex
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
General Instrument
LM2931AZ-5.0RAG
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
IRFS4410ZTRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
FDMS86101
FDMS86101 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and 135mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W in a small outline package.
IRFR5305TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
IRF540SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
IPB017N10N5LFATMA1
Infineon Technologies
Infineon's IPB017N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0017 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation of 313W and wide operating temperature range (-55 to 150 °C).
IRFR6215TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Case Connection: DRAIN;
BSP318SH6327
Infineon's BSP318SH6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 10.4A IDM. Ideal for automotive applications due to AEC-Q101 standard compliance, it features 0.15 ohm RDS(ON) and 60mJ EAS rating.
IRFH5004TRPBF
The Infineon Technologies IRFH5004TRPBF is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A ID. Ideal for SWITCHING applications, it features a built-in diode, 400A IDM, and 0.0026 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 150°C.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
NTD3055-094T4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
AO3400A
Alpha & Omega Semiconductor
AO3400A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.7A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 1.4W, it can handle up to 30A IDM in a SMALL OUTLINE package style.
IRF640
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 122 ns; Transistor Element Material: SILICON;
IRF640PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;
IRF7304TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
FDD7N25LZTM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
AUIRFN8459TR
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; No. of Terminals: 6; Avalanche Energy Rating (EAS): 66 mJ;
IRF530A
The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
FDN5618P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
FDS8984
FDS8984 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 32mJ Avalanche Energy Rating. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS and BUILT-IN DIODE. This small outline transistor has a max operating temperature of 150°C and can handle up to 30A pulsed drain current.
IRF540ZLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
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BSB008NE2LX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;
BSB014N04LX3GXT
Infineon BSB014N04LX3GXT is a N-CHANNEL FET with 40V DS Breakdown Voltage, 400A IDM, and 0.0014 ohm Drain-Source Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 260mJ Avalanche Energy Rating and 89W Power Dissipation.
BSB014N04LX3GXUMA1
Infineon Technologies' BSB014N04LX3GXUMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and can handle a max pulsed drain current of 400A. This transistor is commonly used for switching applications.
BSB017N03LX3G
Infineon's BSB017N03LX3G is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 225mJ EAS, and 0.0017 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 57W and operates b/w -40 to 150 °C.
BSB012NE2LXI
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e4; Terminal Finish: SILVER NICKEL;
BSB015N04NX3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Moisture Sensitivity Level (MSL): 3; Transistor Application: SWITCHING;
BSB015N04NX3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; JESD-609 Code: e4;
BSB017N03LX3GXT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Avalanche Energy Rating (EAS): 225 mJ; Maximum Pulsed Drain Current (IDM): 400 A;
BSB008NE2LXXT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
BSB012N03LX3GXT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-MBCC-N3; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
BSB012NE2LXXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 39 A; No. of Elements: 1;
BSB013NE2LXI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; JESD-30 Code: R-MBCC-N3; Terminal Form: NO LEAD;
BSB012NE2LX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Avalanche Energy Rating (EAS): 285 mJ; Maximum Drain Current (Abs) (ID): 170 A;
BSB012N03LX3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 290 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
BSB013NE2LXIXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Package Shape: RECTANGULAR; Qualification: Not Qualified;
BSB012NE2LXIXUMA1
Power Field-Effect Transistors; Terminal Finish: SILVER NICKEL; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e4;
BSB008NE2LXXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Drain-Source On Resistance: .0008 ohm; Package Shape: RECTANGULAR;
BSB012N03MX3G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BSB014N04LX3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Body Material: METAL; Minimum Operating Temperature: -40 Cel;
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