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BGA231N7E6327XTSA2

Infineon Technologies

BGA231N7E6327XTSA2 by Infineon Technologies

BGA231N7E6327XTSA2 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 16 dB. It operates b/w 1550-1615 MHz, handling up to 0 dBm CW input power. Ideal for applications requiring high performance in RF and microwave systems within -40 to 85°C temperature range.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 401,873 parts In-Stock

1+ parts

-

100+ parts

$0.373

1k+ parts

$0.309

10k+ parts

$0.276

401,873

-

$0.373

$0.309

$0.276

Verical

USA . 401,873 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.387

10k+ parts

$0.345

401,873

-

-

$0.387

$0.345

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 591 parts In-Stock

1+ parts

$0.291

100+ parts

-

1k+ parts

-

10k+ parts

-

591

$0.291

-

-

-

Nova Conductors

Japan . 63 parts In-Stock

1+ parts

$0.346

100+ parts

-

1k+ parts

-

10k+ parts

-

63

$0.346

-

-

-

Vyrian

USA . 2,685 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,685

-

-

-

-

VNN

France . 445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

445

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 401,942 parts In-Stock

1+ parts

$0.260

100+ parts

-

1k+ parts

-

10k+ parts

-

401,942

$0.260

-

-

-

Corphita

USA . 685 parts In-Stock

1+ parts

$0.275

100+ parts

-

1k+ parts

-

10k+ parts

-

685

$0.275

-

-

-

Component Stockers USA

USA . 356,382 parts In-Stock

1+ parts

$0.320

100+ parts

$0.300

1k+ parts

$0.270

10k+ parts

$0.270

356,382

$0.320

$0.300

$0.270

$0.270

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.339

100+ parts

-

1k+ parts

$0.325

10k+ parts

-

2,000

$0.339

-

$0.325

-

Modulus Dynamics

Lithuania . 2,977 parts In-Stock

1+ parts

$2.018

100+ parts

$1.937

1k+ parts

$1.857

10k+ parts

-

2,977

$2.018

$1.937

$1.857

-

Corohmni

South Africa . 279 parts In-Stock

1+ parts

$2.219

100+ parts

-

1k+ parts

-

10k+ parts

-

279

$2.219

-

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$3.171

100+ parts

$2.886

1k+ parts

$2.600

10k+ parts

-

1,000

$3.171

$2.886

$2.600

-

AZTECH Wire

Italy . 1,151 parts In-Stock

1+ parts

$11.810

100+ parts

-

1k+ parts

-

10k+ parts

-

1,151

$11.810

-

-

-

Overview

Elevate your RF and Microwave amplifier performance with the BGA231N7E6327XTSA2 by Infineon Technologies. With a gain of 16 dB and a construction built for durability, this component is designed to enhance signal strength and improve overall system efficiency. Whether you're in the telecommunications industry or working on satellite communications, this narrow band low power amplifier offers exceptional value and benefits. Trust in Infineon's reputation for quality and innovation, and experience the advantages that the BGA231N7E6327XTSA2 can provide for your business.

Feature Benefit Bullets

Maximum Input Power (CW): 0 dBm

Having a maximum input power of 0 dBm ensures that the amplifier can handle a wide range of input power levels without getting damaged.

Construction: COMPONENT

The component construction indicates high quality and reliability of the amplifier, making it suitable for various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this amplifier can operate in high temperature environments without overheating.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40°C makes this amplifier suitable for use in extreme temperature conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections for optimal performance.

RF or Microwave Device Type: NARROW BAND LOW POWER

This device type is ideal for applications that require narrow band and low power specifications, making it a perfect choice for specific use cases.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohms ensures compatibility with standard RF systems and cables, making integration easier and more efficient.

Gain: 16 dB

With a gain of 16 dB, this amplifier can boost the input signal to the desired level, making it suitable for applications where signal amplification is required.

Minimum Operating Frequency: 1550 MHz

The minimum operating frequency of 1550 MHz allows this amplifier to work effectively in applications that require low frequencies.

Maximum Operating Frequency: 1615 MHz

The high maximum operating frequency of 1615 MHz makes this amplifier suitable for applications that require higher frequency operation.

Technical Specifications

RF & Microwave Amplifiers BGA231N7E6327XTSA2 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Infineon Technologies

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16 dB

Maximum Input Power (CW):

0 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

1615 MHz

Minimum Operating Frequency:

1550 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin (Sn)

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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