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RFP5P12

Harris Semiconductor

RFP5P12 by Harris Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Power Dissipation Ambient: 60 W; Transistor Application: SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sinequanon

UK . 3,980 parts In-Stock

1+ parts

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3,980

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ComSIT Distribution GmbH

Germany . 150 parts In-Stock

1+ parts

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150

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ECAB

Sweden . 22 parts In-Stock

1+ parts

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22

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 404 parts In-Stock

1+ parts

$8.983

100+ parts

-

1k+ parts

$8.623

10k+ parts

$8.623

404

$8.983

-

$8.623

$8.623

Supply Digital

USA . 359 parts In-Stock

1+ parts

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359

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Technical Specifications

Power Field Effect Transistors (FET) RFP5P12 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

120 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

100 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

60 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

15 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

160 ns

Trade Compliance

RFP5P12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-369-9102, 5961013699102

NIIN

013699102

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