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IRFD323

Harris Semiconductor

IRFD323 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Median Price

$1.440

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 982 parts In-Stock

1+ parts

-

100+ parts

$1.310

1k+ parts

$1.170

10k+ parts

$1.100

982

-

$1.310

$1.170

$1.100

DigiKey

USA . 982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.440

10k+ parts

-

982

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-

$1.440

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Verical

USA . 982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.462

10k+ parts

$1.375

982

-

-

$1.462

$1.375

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,667 parts In-Stock

1+ parts

$9.100

100+ parts

-

1k+ parts

-

10k+ parts

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3,667

$9.100

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,908 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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17,908

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Supply Digital

USA . 2,646 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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2,646

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRFD323 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Minimum DS Breakdown Voltage:

350 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFD323 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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