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IRFD320R

Harris Semiconductor

IRFD320R by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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USA . 511 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRFD320R attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

400 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFD320R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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