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G3R160MT17J

Genesic Semiconductor

G3R160MT17J by Genesic Semiconductor

G3R160MT17J by Genesic Semiconductor is a N-CHANNEL FET with 1700V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 158mJ EAS, and 0.224 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and -55°C min temp.

Median Price

$9.177

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Nova Conductors

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NAC Semi

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Advanced Electronics

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AZTECH Wire

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Continental Prestige Electronics

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Overview

Unleash the power of innovation with the G3R160MT17J by Genesic Semiconductor. As a leader in the industry, Genesic Semiconductor delivers top-quality Power FETs that are designed for switching applications. This N-Channel transistor offers unparalleled performance with a high DS breakdown voltage of 1700V and a maximum pulsed drain current of 32A. With a built-in diode and small outline package style, this transistor is perfect for enhancing efficiency in various electronic devices. Experience reliability, durability, and superior functionality with the G3R160MT17J - the ultimate solution for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the FET, ensuring a longer lifespan and improved reliability.

Minimum DS Breakdown Voltage: 1700 V

This high breakdown voltage allows the FET to handle high voltage applications with ease, making it suitable for demanding power circuits.

Maximum Pulsed Drain Current (IDM): 32 A

With a high pulsed drain current rating, this FET can effectively handle sudden spikes in current, making it ideal for applications with varying power requirements.

Maximum Power Dissipation (Abs): 145 W

The high power dissipation rating ensures that the FET can efficiently handle power dissipation, making it suitable for high-power applications without overheating.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this FET can operate reliably in elevated temperature environments, increasing its versatility for different applications.

Technical Specifications

Power Field Effect Transistors (FET) G3R160MT17J attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Genesic Semiconductor

Specs

Avalanche Energy Rating (EAS):

158 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1700 V

Maximum Drain Current (ID):

18 A

Maximum Drain-Source On Resistance:

.224 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.1 pF

JEDEC-95 Code:

TO-263

JESD-30 Code:

R-PSSO-G7

No. of Elements:

1

No. of Terminals:

7

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Reference Standard:

IEC-60747-8-4

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

G3R160MT17J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Genesic Semiconductor

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2022.

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