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2N3421

General Semiconductor

2N3421 by General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

Median Price

$25.610

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Mouser Electronics

USA . 88 parts In-Stock

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$23.780

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Microchip Technology

USA . 85 parts In-Stock

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Flip Electronics

USA . 192 parts In-Stock

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$1.479

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Freelance Electronics

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TEDSS.com

USA . 27 parts In-Stock

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American Microsemiconductor Inc.

USA . 24 parts In-Stock

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Bristol Electronics

USA . 1,943 parts In-Stock

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Digiode

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Vyrian

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ICP Electronique

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Mil-Aero Solutions, Inc.

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Century Electronics Ltd.

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Cyclops Electronics Ltd

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Parana Technologies

USA . 1,740 parts In-Stock

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DigiPath Technology Company

USA . 1,402 parts In-Stock

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$1.749

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$1.609

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ChromeModa Solutions

Germany . 3,303 parts In-Stock

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IDEA Electronic Components Group

UK . 804 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Corphita

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Component Stockers USA

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Native Components

USA . 686 parts In-Stock

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Northwest PG Solutions

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Microchip USA

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RGB Technical Solutions

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Glotronic Ltd.

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Perfect Parts

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3421 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from General Semiconductor

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

150 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1200 ns

Maximum Turn On Time (ton):

300 ns

Maximum VCEsat:

.5 V

Trade Compliance

2N3421 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-432-9183, 5961004329183, 5961-00-431-3245, 5961004313245, 5961-00-102-1362, 5961001021362, 5961-00-450-7381, 5961004507381, 5961-01-117-1648, 5961011171648, 5961-99-664-2691, 5961996642691

NIIN

004329183, 004313245, 001021362, 004507381, 011171648, 996642691

PCN

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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