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FLC157XP

Fujitsu Semiconductor America

FLC157XP by Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 15 V; Package Style (Meter): UNCASED CHIP;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Power Field Effect Transistors (FET) FLC157XP attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Fujitsu Semiconductor America

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum DS Breakdown Voltage:

15 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

C BAND

JESD-30 Code:

R-XUUC-N4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

FLC157XP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fujitsu Semiconductor America

Fujitsu Semiconductor America, Inc. leads the industry in innovation. Specifically, Fujitsu provides high-quality, reliable semiconductor products and services for the wireless, automotive, consumer, industrial, communications, and other markets throughout North and South America.

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