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MRF897

Freescale Semiconductor

MRF897 by Freescale Semiconductor

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Transistor Application: AMPLIFIER; No. of Elements: 2;

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF897 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Freescale Semiconductor

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Case Connection:

EMITTER

Maximum Collector Current (IC):

4 A

Maximum Collector-Base Capacitance:

28 pF

Maximum Collector-Emitter Voltage:

30 V

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF897 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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