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MRF19045LR3

Freescale Semiconductor

MRF19045LR3 by Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Transistor Application: AMPLIFIER;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,554 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 1,325 parts In-Stock

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$26.050

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Authorized Procurement Solutions

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UNI Independent Distributors

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Glotronic Ltd.

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Corphita

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF19045LR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF19045LR3 Transistors trade compliance attributes, and parameters.

ECCN

5A991

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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