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FQP4N80

Fairchild Semiconductor

FQP4N80 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

Median Price

$1.196

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Arrow

USA . 1,000 parts In-Stock

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$1.922

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$1.257

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$0.889

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$1.922

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Flip Electronics (Authorized)

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Verical

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$1.066

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Rochester

USA . 230 parts In-Stock

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$1.150

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$0.955

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$0.851

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Distributors (In-Stock)

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Digiode

USA . 702 parts In-Stock

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$0.898

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Vyrian

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TME

Poland . 4 parts In-Stock

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Carlin Systems, Inc.

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J2 Sourcing AB

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Bristol Electronics

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Dan-Mar Components

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ComSIT Distribution GmbH

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Elcom Components

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Schukat

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Corphita

USA . 2,893 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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Native Components

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Northwest PG Solutions

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Component Stockers USA

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Microchip USA

USA . 7,513 parts In-Stock

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A-Z Elektronik GmbH

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Perfect Parts

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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Supply Digital

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Authorized Procurement Solutions

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Allen Electronics Distributors

USA . 150 parts In-Stock

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$1.282

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Technical Specifications

Power Field Effect Transistors (FET) FQP4N80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

460 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

3.9 A

Maximum Drain Current (ID):

3.9 A

Maximum Drain-Source On Resistance:

3.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

15.6 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQP4N80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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