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FQD4N50TM

Fairchild Semiconductor

FQD4N50TM by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;

Median Price

$0.369

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5

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1k+

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Rochester

USA . 3,035 parts In-Stock

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$0.423

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$0.351

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$0.313

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Farnell

UK . 3,035 parts In-Stock

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$0.315

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Vyrian

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Digiode

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LIBRA Elektronik GmbH

Germany . 2,500 parts In-Stock

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Corphita

USA . 462 parts In-Stock

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Andel Nordic

Denmark . 500 parts In-Stock

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$2.744

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$2.634

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$2.634

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$2.634

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Supply Digital

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Technical Specifications

Power Field Effect Transistors (FET) FQD4N50TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

260 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

2.6 A

Maximum Drain Current (ID):

2.6 A

Maximum Drain-Source On Resistance:

2.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10.4 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQD4N50TM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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