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FQAF16N50

Fairchild Semiconductor

FQAF16N50 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;

Median Price

$2.940

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Farnell

UK . 920 parts In-Stock

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$4.720

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$2.790

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$2.730

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920

$4.720

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$2.730

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Rochester

USA . 8,147 parts In-Stock

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$2.410

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$2.160

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$2.030

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DigiKey

USA . 8,060 parts In-Stock

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$3.180

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$3.180

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Verical

USA . 8,060 parts In-Stock

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$2.700

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$2.538

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Digiode

USA . 2,503 parts In-Stock

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$2.546

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Vyrian

USA . 1,718 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 21 parts In-Stock

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Martec Srl

Italy . 10 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$0.566

100+ parts

$0.515

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$0.464

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10

$0.566

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Corohmni

South Africa . 180 parts In-Stock

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$0.675

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Corphita

USA . 1,465 parts In-Stock

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$2.412

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Component Stockers USA

USA . 2,172 parts In-Stock

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$2.770

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$2.610

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$2.360

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Continental Prestige Electronics

USA . 8,177 parts In-Stock

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$4.720

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$2.790

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Perfect Parts

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TANS Electronics

Latvia . 7,970 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

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A-Z Elektronik GmbH

Germany . 4,548 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,032 parts In-Stock

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SupplyDigital Components

Austria . 1,905 parts In-Stock

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Northwest PG Solutions

USA . 1,655 parts In-Stock

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Supply Digital

USA . 1,426 parts In-Stock

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Problanco Electronics

Mexico . 1,164 parts In-Stock

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Assy Fe

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UHIMA Technologies

Türkiye . 587 parts In-Stock

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Native Components

USA . 163 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FQAF16N50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

980 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

11.3 A

Maximum Drain Current (ID):

11.3 A

Maximum Drain-Source On Resistance:

.32 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

45.2 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQAF16N50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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