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FQAF10N80

Fairchild Semiconductor

FQAF10N80 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3;

Median Price

$1.835

Lifecycle Status

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4

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1k+

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Rochester

USA . 7,549 parts In-Stock

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$1.570

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$1.400

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$1.320

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Farnell

UK . 7,549 parts In-Stock

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$2.100

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Digiode

USA . 872 parts In-Stock

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$1.653

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Vyrian

USA . 570 parts In-Stock

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Corphita

USA . 915 parts In-Stock

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$1.566

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.691

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$1.539

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$1.387

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Andel Nordic

Denmark . 50 parts In-Stock

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$2.221

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$2.132

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$2.132

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Microchip USA

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$10.855

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A-Z Elektronik GmbH

Germany . 6,503 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,335 parts In-Stock

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Glotronic Ltd.

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Supply Digital

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Technical Specifications

Power Field Effect Transistors (FET) FQAF10N80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

920 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

6.7 A

Maximum Drain Current (ID):

6.7 A

Maximum Drain-Source On Resistance:

1.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

26.8 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQAF10N80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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