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FDS2670_NL

Fairchild Semiconductor

FDS2670_NL by Fairchild Semiconductor

FDS2670_NL by Fairchild Semiconductor is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 3A, 0.13 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in an 8-terminal GULL WING package with PLASTIC/EPOXY body material and can handle up to 2.5W power dissipation at 150°C.

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Overview

Unleash the power of innovation with the FDS2670_NL by Fairchild Semiconductor. Designed with precision and expertise, this N-channel Field Effect Transistor offers unparalleled performance in switching applications. With a high DS breakdown voltage of 200V and a maximum drain current of 3A, this transistor is built to handle the most demanding tasks. The compact design, gull wing terminals, and small outline package make it easy to integrate into your projects. Trust in Fairchild Semiconductor's legacy of quality and reliability, and experience the difference with the FDS2670_NL. Elevate your electronics with this cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ensuring easy handling and long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors have higher mobility and conductivity compared to P-channel transistors, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier and more efficient circuit design, saving space and reducing component count.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and low power consumption, ideal for use in various electronic devices.

Surface Mount: YES

Being surface mountable, this transistor can be easily integrated into compact circuit designs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 200 V

With a minimum breakdown voltage of 200 V, this transistor can handle high voltage applications with ease, offering reliable performance under demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy mounting and compatibility with various circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form allows for secure soldering and reliable electrical connections, ensuring stable operation in different operating environments.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and fast turn-on characteristics, making them suitable for applications requiring precise control and efficiency.

Maximum Drain Current (Abs) (ID): 3 A

With a maximum drain current of 3 A, this transistor can handle high current loads, making it suitable for power applications that require robust performance.

No. of Terminals: 8

Having 8 terminals allows for more versatile circuit connections and configurations, offering flexibility in designing complex electronic circuits.

Maximum Power Dissipation (Abs): 2.5 W

The maximum power dissipation of 2.5 W ensures that the transistor can handle power spikes and operate reliably under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact footprint, making it suitable for space-constrained applications where size and weight are critical factors.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low noise characteristics, making this transistor suitable for high-performance electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable operation in industrial and automotive applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, making this transistor suitable for long-term use in various electronic devices.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring secure connections and long-term reliability in different operating conditions.

Maximum Drain-Source On Resistance: 0.13 ohm

With a low drain-source on resistance of 0.13 ohms, this transistor offers efficient power handling and minimal voltage drop, ensuring high performance in power switching applications.

Terminal Position: DUAL

Having dual terminal positions allows for versatile mounting and connection options, providing flexibility in circuit layout and design.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS2670_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS2670_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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