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M12L64164A-5TG

Elite Semiconductor Microelectronics Technologyinc

M12L64164A-5TG by Elite Semiconductor Microelectronics Technologyinc

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3,250 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,902 parts In-Stock

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1,902

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Cyclops Electronics Ltd

UK . 10 parts In-Stock

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10

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Distributors (Availability)

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Kepictronics

USA . 1,080 parts In-Stock

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1,080

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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S.R.D Solutions

India . 300 parts In-Stock

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300

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Technical Specifications

DRAM M12L64164A-5TG attributes and parameters. Explore more DRAM devices from Elite Semiconductor Microelectronics Technologyinc

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

4.5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

M12L64164A-5TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Elite Semiconductor Microelectronics Technologyinc

Elite Semiconductor Microelectronics Technology Inc. (ESMT) is a professional IC design company, founded in June 1998 in Taiwan's Hsinchu Science Industrial Park. The company's main business includes own brand IC product design, manufacturing, sales and technical services. ESMT successfully went public on Taiwan Stock Exchange, code 3006, in March 2002. Right from the beginning, ESMT’s mission has been to become a supplier of all types of memory products and technology. Our specialty DRAM products can be widely used in PC peripheral, home appliances, and consumer, communications systems, with various density and interface specifications(including SDRAM, DDR I / II / III and PSRAM, low-power Mobile DRAM, etc.); In the flash memory segment, ESMT also offers various density and interface type NOR and NAND Flash product families to satisfy customers’ need in developing variety of application system. In addition, due to the growing adoption of System in Package (SiP) in many applications, ESMT has also developed Known-Good-Die (KGD) and Multi-Chip Package (MCP) solutions of our memory products to support all requirements from customers.

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