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EPC2212

Efficient Power Conversion

EPC2212 by Efficient Power Conversion

EPC2212 by Efficient Power Conversion is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 75A IDM, and 0.0135 ohm Drain-Source On Resistance. Utilizes Gallium Nitride technology with an operating range of -40 to 150 °C.

Median Price

$3.940

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 94,533 parts In-Stock

1+ parts

$3.940

100+ parts

$1.814

1k+ parts

$1.622

10k+ parts

$1.325

94,533

$3.940

$1.814

$1.622

$1.325

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.462

100+ parts

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300

$1.462

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Vyrian

USA . 135,359 parts In-Stock

1+ parts

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135,359

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

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2,500

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Bristol Electronics

USA . 53 parts In-Stock

1+ parts

-

100+ parts

$1.875

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53

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$1.875

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.462

100+ parts

$1.432

1k+ parts

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2,000

$1.462

$1.432

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Microchip USA

USA . 4,652 parts In-Stock

1+ parts

$8.845

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4,652

$8.845

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Overview

Unlock the power of Efficient Power Conversion with the EPC2212, a high-quality N-CHANNEL Power FET with a built-in diode. Ideal for switching applications, this transistor offers enhanced performance and reliability, thanks to its GaN technology and AEC-Q101 certification. With a maximum pulsing drain current of 75A and a minimum breakdown voltage of 100V, this chip delivers superior efficiency and thermal performance. Whether you're designing automotive systems or industrial equipment, the EPC2212 provides unmatched value and benefits for your projects.

Feature Benefit Bullets

Polarity/Channel Type: N-CHANNEL

N-Channel FETs are known for higher performance and efficiency compared to P-Channel FETs, making this product a good choice for high power applications.

Minimum DS Breakdown Voltage: 100 V

The high breakdown voltage allows this FET to handle high voltages, making it suitable for use in power switching applications.

Maximum Pulsed Drain Current (IDM): 75 A

With a high pulse drain current rating, this FET can handle large current spikes, making it reliable in demanding applications.

Transistor Element Material: GALLIUM NITRIDE

Gallium Nitride is known for its high electron mobility and fast switching speeds, making this FET ideal for high-frequency switching applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can operate reliably in high-temperature environments, ensuring long-term performance.

Technical Specifications

Power Field Effect Transistors (FET) EPC2212 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Efficient Power Conversion

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

18 A

Maximum Drain-Source On Resistance:

.0135 ohm

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Maximum Feedback Capacitance (Crss):

3 pF

JESD-30 Code:

R-XUUC-N6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

75 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

EPC2212 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Efficient Power Conversion

About Efficient Power Conversion Corporation (EPC) The Value of Gallium Nitride Technology The cost of electrical power is a key driver of socioeconomic vitality, as it enables us to improve our quality of life and advance new applications and industries. Silicon has hit its physical limits and, therefore, is no longer able to stay ahead of our demand for more and more efficient power. In order to re-establish momentum a new material is needed. EPC is the leading provider of gallium nitride (GaN)-based power management technology and is doing more than just improving efficiency of electrical power. It is also enabling new, life-changing applications that didn’t exist five years ago. From wireless power and autonomous vehicles to high-speed mobile communications, low cost satellites, and transformations in medical care, among many others, GaN is becoming the preferred technology for progressive companies that are eager to remain at the forefront of their industries.

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