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EPC2012C

Efficient Power Conversion

EPC2012C by Efficient Power Conversion

EPC2012C by Efficient Power Conversion is a N-CHANNEL FET with 200V DS Breakdown Voltage. It has a max IDM of 22A and 0.1 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this Gallium Nitride transistor operates in ENHANCEMENT MODE.

Median Price

$3.710

Lifecycle Status

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1k+

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DigiKey

USA . 34,458 parts In-Stock

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$3.710

100+ parts

$1.701

1k+ parts

$1.499

10k+ parts

$1.225

34,458

$3.710

$1.701

$1.499

$1.225

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Nova Conductors

Japan . 53 parts In-Stock

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$1.355

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Vyrian

USA . 16,969 parts In-Stock

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Continental Prestige Electronics

USA . 1,356 parts In-Stock

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$1.355

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$1.328

1,356

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Argo Parts USA

USA . 79 parts In-Stock

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$1.355

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Aztec Data Supply Inc.

USA . 1,573 parts In-Stock

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$1.740

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QUARKTWIN TECHNOLOGY LTD

USA . 28,198 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$1.328

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$1.287

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$1.260

2,000

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GreenTree Electronics

Israel . 1,544 parts In-Stock

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Overview

Upgrade your power systems with the EPC2012C by Efficient Power Conversion. As a top manufacturer in the industry, Efficient Power Conversion delivers high-quality Power Field Effect Transistors that are reliable and efficient. The EPC2012C is a game-changer in switching applications, offering a breakthrough in performance and durability. With a built-in diode and an operating mode of enhancement mode, this N-channel transistor maximizes efficiency while minimizing energy loss. Experience the benefits of Gallium Nitride technology and enhance your power management with the EPC2012C today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

Allows for efficient operation in switching applications, making it a reliable option.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space, making it a convenient choice for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 200 V

Provides a high breakdown voltage for enhanced reliability and robustness in high voltage environments.

Package Shape: RECTANGULAR

Offers a standard shape for easy integration into various systems, making it versatile in application.

Operating Mode: ENHANCEMENT MODE

Operates in enhancement mode for improved control and efficiency in switching operations.

Maximum Pulsed Drain Current (IDM): 22 A

Handles high pulsed drain currents, suitable for applications requiring quick bursts of power.

No. of Terminals: 4

Features 4 terminals for easy connectivity and integration into circuits, enhancing usability.

Package Style (Meter): UNCASED CHIP

A chip package style that allows for direct mounting on a board, simplifying installation and reducing footprint.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for high efficiency and reliability in various applications.

Transistor Element Material: GALLIUM NITRIDE

Incorporates gallium nitride for improved performance and efficiency compared to traditional materials.

Maximum Drain Current (ID): 5 A

Handles high drain currents, suitable for applications requiring continuous power delivery.

Maximum Drain-Source On Resistance: 0.1 ohm

Offers low on-resistance for reduced power loss and improved efficiency in operation.

Technical Specifications

Power Field Effect Transistors (FET) EPC2012C attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Efficient Power Conversion

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XXUC-X4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

22 A

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

EPC2012C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Efficient Power Conversion

About Efficient Power Conversion Corporation (EPC) The Value of Gallium Nitride Technology The cost of electrical power is a key driver of socioeconomic vitality, as it enables us to improve our quality of life and advance new applications and industries. Silicon has hit its physical limits and, therefore, is no longer able to stay ahead of our demand for more and more efficient power. In order to re-establish momentum a new material is needed. EPC is the leading provider of gallium nitride (GaN)-based power management technology and is doing more than just improving efficiency of electrical power. It is also enabling new, life-changing applications that didn’t exist five years ago. From wireless power and autonomous vehicles to high-speed mobile communications, low cost satellites, and transformations in medical care, among many others, GaN is becoming the preferred technology for progressive companies that are eager to remain at the forefront of their industries.

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