Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
EPC2014C by Efficient Power Conversion is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 0.016 ohm RDS(on), and uses Gallium Nitride technology. The transistor operates in ENHANCEMENT MODE with a max ID of 10A, making it suitable for high-power applications.
Median Price
$2.200
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
DigiKey
1+ parts
100+ parts
$0.958
1k+ parts
$0.734
10k+ parts
$0.600
Nova Conductors
$0.696
-
Vyrian
Prism Electronics
Sunrise Surplus Inc.
Aranea Global
$0.682
$0.655
Argo Parts USA
$0.675
Continental Prestige Electronics
Aztec Data Supply Inc.
$1.920
Authorized Procurement Solutions
N-CHANNEL FETs typically have lower ON resistance and higher electron mobility, making them suitable for high power applications.
Having a built-in diode helps in preventing reverse current flow and protects the circuit from damage.
Designed specifically for switching applications, ensuring efficient and rapid on/off switching transitions.
With a minimum breakdown voltage of 40V, this FET can handle high voltage applications without the risk of breakdown.
Rectangular package shape allows for easy mounting and integration into a variety of electronic circuits.
Enhancement mode FETs are normally off devices which provide better control over the switching operation.
High maximum pulsed drain current rating allows for handling of short-term peak currents without damage.
Having 5 terminals provides additional flexibility in circuit design and connection options.
Uncased chip package style offers compact size and efficient heat dissipation for better performance.
MOSFET technology ensures low power consumption and high switching speeds, making it ideal for various applications.
Gallium Nitride material offers higher breakdown voltages and faster switching speeds compared to traditional silicon transistors.
With a maximum drain current of 10A, this FET can handle moderate to high current loads efficiently.
Low on-resistance ensures minimal power loss and heat generation during operation, making it energy-efficient.
Power Field Effect Transistors (FET) EPC2014C attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Efficient Power Conversion
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
EPC2014C Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Assembly Site 25/Jun/2021
About Efficient Power Conversion Corporation (EPC) The Value of Gallium Nitride Technology The cost of electrical power is a key driver of socioeconomic vitality, as it enables us to improve our quality of life and advance new applications and industries. Silicon has hit its physical limits and, therefore, is no longer able to stay ahead of our demand for more and more efficient power. In order to re-establish momentum a new material is needed. EPC is the leading provider of gallium nitride (GaN)-based power management technology and is doing more than just improving efficiency of electrical power. It is also enabling new, life-changing applications that didn’t exist five years ago. From wireless power and autonomous vehicles to high-speed mobile communications, low cost satellites, and transformations in medical care, among many others, GaN is becoming the preferred technology for progressive companies that are eager to remain at the forefront of their industries.
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
B340A-13-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
International Semiconductor
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
Changzhou Galaxy Century Microelectronics
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
Weitron Technology
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
Brightking
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
DS18B20Z+T&R
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
M39029/58-360
Tri-star Electronics International
CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;
SS14
Changzhou Starsea Electronics
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
FQB47P06TM-AM002
Onsemi
FQB47P06TM-AM002 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 188A IDM, and 0.026 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features include 820mJ EAS, 160W Pdiss, and -55 to +175°C Temp Range.
IRFB4227PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
IRLR3110ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
FDD4243
The Onsemi FDD4243 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 60A IDM, and 0.064 ohm RDS. Ideal for power management applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power control in compact designs.
AUIRF7759L2TR
Infineon Technologies
AUIRF7759L2TR by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage and 640A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.0023 ohm On Resistance, and operates in ENHANCEMENT MODE.
IRF7240TRPBF
IRF7240TRPBF by Infineon is a P-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage, 10.5A max drain current, and 0.015 ohm max on resistance. With a small outline package style and operating temperature range of -55 to 150 °C, it's ideal for power management in various electronic devices.
SIR873DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR873DP-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 50A and EAS of 80mJ, this MOSFET has 0.0475 ohm Drain-Source On Resistance. Its small outline package and matte tin finish make it suitable for various electronic designs.
FQD3P50TM
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
FDD6685
FDD6685 by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 52W and peak reflow temperature of 260°C, it offers reliable performance in various electronic devices.
IRF9540NPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Pulsed Drain Current (IDM): 76 A;
FQT7N10LTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
FDB44N25TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
IRF6215STRLPBF
IRF6215STRLPBF by Infineon Technologies is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 44A and EAS of 310mJ, with an operating temperature up to 175°C. This SINGLE configuration transistor has 0.29 ohm RDS(on) and can handle a max ID of 13A.
IRF540ZPBF
Infineon's IRF540ZPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 140A IDM and 0.0265 ohm RDS(on), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with DRAIN connection and built-in DIODE makes it suitable for high-power circuits.
IRF7749L1TRPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
NDT456P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (Abs) (ID): 7.5 A;
IRF3205PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
SQJ479EP-T1_GE3
Vishay Intertechnology's SQJ479EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 100A IDM, and 0.033 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
EPC2204
Efficient Power Conversion
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Minimum Operating Temperature: -40 Cel;
EPC2012C
EPC2012C by Efficient Power Conversion is a N-CHANNEL FET with 200V DS Breakdown Voltage. It has a max IDM of 22A and 0.1 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this Gallium Nitride transistor operates in ENHANCEMENT MODE.
EPC2012CENGR
N-CHANNEL; Configuration: SINGLE; Maximum Pulsed Drain Current (IDM): 22 A; Terminal Form: UNSPECIFIED; Transistor Element Material: GALLIUM NITRIDE; Operating Mode: ENHANCEMENT MODE;
EPC2034C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain Current (ID): 48 A; JESD-30 Code: R-XUUC-B24;
EPC2206
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 80 V; Reference Standard: AEC-Q101; No. of Elements: 1;
EPC2010C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Drain Current (Abs) (ID): 22 A; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE;
EPC2015
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Terminal Form: UNSPECIFIED; Transistor Element Material: GALLIUM NITRIDE;
EPC2018
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Drain-Source On Resistance: .025 ohm; Additional Features: ULTRA LOW RESISTANCE; Maximum Pulsed Drain Current (IDM): 60 A; Peak Reflow Temperature (C): NOT SPECIFIED;
EPC2007C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; No. of Terminals: 5; Package Style (Meter): UNCASED CHIP; Transistor Element Material: GALLIUM NITRIDE; Operating Mode: ENHANCEMENT MODE;
EPC2001C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; No. of Elements: 1;
EPC2012
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Terminal Form: UNSPECIFIED; Maximum Feedback Capacitance (Crss): 4.4 pF; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: GALLIUM NITRIDE;
EPC2015CENGR
N-CHANNEL; Configuration: SINGLE; Terminal Form: UNSPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Terminal Position: UNSPECIFIED;
EPC2016
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Drain Current (ID): 11 A; Package Style (Meter): UNCASED CHIP; No. of Terminals: 6; Package Body Material: UNSPECIFIED;
EPC2019
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; JESD-30 Code: R-XXUC-X7; Transistor Element Material: GALLIUM NITRIDE; Maximum Pulsed Drain Current (IDM): 42 A; Package Shape: RECTANGULAR;
EPC2016C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 75 A; Minimum DS Breakdown Voltage: 100 V;
EPC2036
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Package Shape: SQUARE; JESD-30 Code: S-XXUC-X4; Transistor Element Material: GALLIUM NITRIDE; Additional Features: ULTRA LOW RESISTANCE;
EPC2010
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Package Body Material: UNSPECIFIED; Additional Features: ULTRA LOW RESISTANCE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 12 A;
EPC2014
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; Maximum Drain-Source On Resistance: .016 ohm; Transistor Element Material: GALLIUM NITRIDE;
EPC2053
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): UNCASED CHIP; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 246 A;
EPC2033
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Operating Mode: ENHANCEMENT MODE; Terminal Position: UNSPECIFIED; JESD-30 Code: R-XXUC-X24; No. of Elements: 1;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved