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ZDT751TA

Diodes Incorporated

ZDT751TA by Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 40;

Median Price

$1.510

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 96 parts In-Stock

1+ parts

$1.510

100+ parts

$0.726

1k+ parts

$0.517

10k+ parts

-

96

$1.510

$0.726

$0.517

-

Mouser Electronics

USA . 804 parts In-Stock

1+ parts

$1.720

100+ parts

$0.733

1k+ parts

$0.507

10k+ parts

$0.427

804

$1.720

$0.733

$0.507

$0.427

DigiKey

USA . 250 parts In-Stock

1+ parts

$1.720

100+ parts

$0.733

1k+ parts

$0.528

10k+ parts

$0.427

250

$1.720

$0.733

$0.528

$0.427

Verical

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.427

10k+ parts

-

26,000

-

-

$0.427

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.618

10k+ parts

$0.500

1,000

-

-

$0.618

$0.500

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.589

10k+ parts

$0.544

4,000

-

-

$0.589

$0.544

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,985

-

-

-

-

ComSIT Distribution GmbH

Germany . 1,706 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,706

-

-

-

-

LIBRA Elektronik GmbH

Germany . 763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

763

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 490 parts In-Stock

1+ parts

$1.110

100+ parts

$0.684

1k+ parts

$0.519

10k+ parts

-

490

$1.110

$0.684

$0.519

-

Microchip USA

USA . 2,202 parts In-Stock

1+ parts

$3.334

100+ parts

-

1k+ parts

-

10k+ parts

-

2,202

$3.334

-

-

-

Kepictronics

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39,000

-

-

-

-

Metaverse IC Inc.

Canada . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

RC Electronics

USA . 29,369 parts In-Stock

1+ parts

-

100+ parts

$0.570

1k+ parts

$0.540

10k+ parts

$0.530

29,369

-

$0.570

$0.540

$0.530

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,707 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,707

-

-

-

-

Perfect Parts

USA . 12,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,672

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.662

10k+ parts

-

1,000

-

-

$0.662

-

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZDT751TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZDT751TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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