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ZDT749TA

Diodes Incorporated

ZDT749TA by Diodes Incorporated

ZDT749TA by Diodes Inc.: PNP BJT with 2 elements, hFE of 15, VCE max of 25V. Ideal for switching applications in a small outline package, featuring Gull Wing terminals and matte tin finish.

Median Price

$1.556

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 997 parts In-Stock

1+ parts

$1.231

100+ parts

$0.789

1k+ parts

$0.607

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-

997

$1.231

$0.789

$0.607

-

Farnell

UK . 997 parts In-Stock

1+ parts

$1.341

100+ parts

$0.750

1k+ parts

$0.576

10k+ parts

$0.515

997

$1.341

$0.750

$0.576

$0.515

Newark

USA . 598 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.513

10k+ parts

-

598

$1.770

$0.755

$0.513

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Mouser Electronics

USA . 472 parts In-Stock

1+ parts

$2.210

100+ parts

$0.956

1k+ parts

$0.640

10k+ parts

$0.555

472

$2.210

$0.956

$0.640

$0.555

DigiKey

USA . 341 parts In-Stock

1+ parts

$2.210

100+ parts

$0.955

1k+ parts

$0.760

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341

$2.210

$0.955

$0.760

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Verical

USA . 8,000 parts In-Stock

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$0.427

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8,000

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-

$0.427

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Avnet

USA . 1,000 parts In-Stock

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1,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 95 parts In-Stock

1+ parts

$0.515

100+ parts

-

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95

$0.515

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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ComSIT Distribution GmbH

Germany . 23,750 parts In-Stock

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23,750

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ComSIT USA

USA . 23,530 parts In-Stock

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23,530

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IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.947

10k+ parts

$0.849

2,000

-

-

$0.947

$0.849

Vyrian

USA . 1,736 parts In-Stock

1+ parts

-

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1,736

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,406 parts In-Stock

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1,406

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Semi Source

USA . 1,090 parts In-Stock

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1,090

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NAC Semi

USA . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.504

100+ parts

-

1k+ parts

$0.484

10k+ parts

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50

$0.504

-

$0.484

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Argo Parts USA

USA . 2,080 parts In-Stock

1+ parts

$0.515

100+ parts

-

1k+ parts

-

10k+ parts

$0.499

2,080

$0.515

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-

$0.499

Component Stockers USA

USA . 22,124 parts In-Stock

1+ parts

$1.120

100+ parts

$0.710

1k+ parts

$0.420

10k+ parts

$0.420

22,124

$1.120

$0.710

$0.420

$0.420

Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

$1.120

100+ parts

$0.690

1k+ parts

$0.420

10k+ parts

-

1,000

$1.120

$0.690

$0.420

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Advanced Electronics

New Zealand . 17 parts In-Stock

1+ parts

$1.794

100+ parts

$1.633

1k+ parts

$1.471

10k+ parts

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17

$1.794

$1.633

$1.471

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Microchip USA

USA . 4,952 parts In-Stock

1+ parts

$3.334

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4,952

$3.334

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Kepictronics

USA . 33,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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Perfect Parts

USA . 7,260 parts In-Stock

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Eastek

USA . 1,000 parts In-Stock

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$0.630

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1,000

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$0.630

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of innovation with the ZDT749TA Power Bipolar Junction Transistor by Diodes Incorporated. Designed for high-performance switching applications, this PNP transistor boasts quality construction and reliable functionality. Ideal for a wide range of electronic devices, the ZDT749TA offers customers a versatile solution with a small outline package, dual terminal position, and impressive collector-emitter voltage of 25V. Experience the value of cutting-edge technology and unleash the potential of your designs with the ZDT749TA from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this product ideal for such applications.

Configuration: SEPARATE, 2 ELEMENTS

The separate elements allow for individual control, enhancing the versatility of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

The surface mount capability makes for easy and efficient assembly onto circuit boards.

Package Shape: RECTANGULAR

The rectangular shape allows for compact placement on a circuit board, saving valuable space.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are commonly used in surface mount applications.

No. of Elements: 2

Having two elements increases the transistor's functionality and flexibility in circuit design.

No. of Terminals: 8

The abundance of terminals allows for multiple connections and configurations in circuitry.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor suitable for space-constrained designs.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures stable and consistent transistor performance.

Maximum Collector-Emitter Voltage: 25 V

The high maximum collector-emitter voltage rating provides flexibility in circuit design.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, ensuring long-term performance.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate power loads.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers corrosion resistance and good solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for various configurations and connections in a circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time helps prevent heat damage during assembly processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260°C ensures proper soldering and bonding during assembly.

Nominal Transition Frequency (fT): 160 MHz

The high nominal transition frequency makes this transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZDT749TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZDT749TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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