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SDT10A100P5-13D

Diodes Incorporated

SDT10A100P5-13D by Diodes Incorporated

SDT10A100P5-13D by Diodes Inc. is a Schottky rectifier diode with 100V reverse voltage, 10A output current, and 0.68V forward voltage. It has a fast soft recovery application, operates b/w -55 to 150°C, and features a matte tin finish. Ideal for surface mount applications requiring high efficiency and low power loss.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,768 parts In-Stock

1+ parts

$0.990

100+ parts

$0.402

1k+ parts

$0.280

10k+ parts

$0.224

1,768

$0.990

$0.402

$0.280

$0.224

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.196

15,000

-

-

-

$0.196

Future Electronics

Canada . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.180

5,000

-

-

-

$0.180

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.259

-

-

-

Vyrian

USA . 6,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,878

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 7,096 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

-

7,096

$0.153

-

-

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Continental Prestige Electronics

USA . 4,684 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

-

10k+ parts

$0.254

4,684

$0.259

-

-

$0.254

Argo Parts USA

USA . 2,409 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

-

10k+ parts

$0.251

2,409

$0.259

-

-

$0.251

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.259

100+ parts

$0.254

1k+ parts

-

10k+ parts

-

100

$0.259

$0.254

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-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,000

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Overview

Unlock the power of advanced electronics with the Diodes Incorporated SDT10A100P5-13D. Crafted with precision and expertise, this cutting-edge diode offers unparalleled performance in fast soft recovery applications. With a maximum output current of 10A and a forward voltage of just 0.68V, this Schottky diode delivers efficiency and reliability like never before. Whether you're designing high-speed circuits or energy-efficient devices, trust Diodes Incorporated to provide the quality and innovation you need. Experience the difference today and take your projects to new heights with the SDT10A100P5-13D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation and protection to the diode inside, ensuring long-term durability and performance.

Surface Mount: YES

Surface mount design makes it easy to integrate this diode into a variety of circuit boards and electronic devices, saving space and assembly time.

Maximum Reverse Current: 100 uA

Low maximum reverse current ensures efficient operation and minimal power loss in reverse bias conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds, low forward voltage drop, and high efficiency, making it suitable for fast soft recovery applications.

Technical Specifications

Diodes & Rectifiers SDT10A100P5-13D attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SDT10A100P5-13D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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