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SDT12S60

Infineon Technologies

SDT12S60 by Infineon Technologies

Infineon's SDT12S60 is a Schottky rectifier diode with 600V reverse voltage, 12A output current, and 1.7V forward voltage. It has a max power dissipation of 88.2W and uses silicon carbide as the diode element material. Ideal for applications requiring high-power rectification in electronic circuits.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 4,634 parts In-Stock

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Digiode

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Nova Conductors

Japan . 50 parts In-Stock

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LWI Electronics Inc

India . 27 parts In-Stock

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ECAB

Sweden . 5 parts In-Stock

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Zilex Electronics Inc.

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Ampacity Inc.

Singapore . 990 parts In-Stock

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Semicontronic

India . 976 parts In-Stock

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Modulus Dynamics

Lithuania . 6,889 parts In-Stock

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$0.096

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$0.092

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$0.088

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AZTECH Wire

Italy . 415 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Kepictronics

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Corphita

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Overview

Discover the SDT12S60 by Infineon Technologies, a high-quality Schottky rectifier diode that offers exceptional performance and reliability. Infineon Technologies is a trusted manufacturer known for producing top-of-the-line electronic components. The SDT12S60 is perfect for a wide range of applications, providing customers with efficient power conversion and superior thermal management. Experience the value and benefits of this product, from its high power dissipation capability to its maximum peak reverse voltage of 600V. Upgrade your electronics with the SDT12S60 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring durability and reliability.

Maximum Operating Temperature: 175 °C

Can operate efficiently at high temperatures without compromising performance.

Maximum Power Dissipation: 88.2 W

High power dissipation capability allows for handling of large current and voltage loads.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification of AC to DC, making it suitable for various electronic applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching capabilities, improving efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can withstand high reverse voltages, making it suitable for applications requiring such voltage levels.

Diode Element Material: SILICON CARBIDE

Silicon carbide offers high thermal conductivity and can operate at high temperatures, enhancing overall performance and longevity of the diode.

Technical Specifications

Diodes & Rectifiers SDT12S60 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

36 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

88.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SDT12S60 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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