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SD1A220G

Diodes Incorporated

SD1A220G by Diodes Incorporated

SD1A220G by Diodes Inc. is a SIDAC diode with 200mA holding current, 240V breakdown voltage, and -40 to 125°C operating range. It's used as a trigger device in AC circuits due to its isolated case connection and axial terminal position.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,000 parts In-Stock

1+ parts

$0.380

100+ parts

$0.146

1k+ parts

$0.096

10k+ parts

$0.062

4,000

$0.380

$0.146

$0.096

$0.062

DigiKey

USA . 2,999 parts In-Stock

1+ parts

$0.400

100+ parts

$0.153

1k+ parts

$0.101

10k+ parts

$0.073

2,999

$0.400

$0.153

$0.101

$0.073

Verical

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.051

100,000

-

-

-

$0.051

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

GreenTree Electronics

Israel . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Overview

Unlock a world of possibilities with the SD1A220G by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in all their products. The SD1A220G is a Silicone Diode For Alternating Current (SIDAC) that offers unparalleled performance and efficiency. With a nominal holding current of 200 mA and a maximum breakdown voltage of 240V, this SIDAC is perfect for a wide range of applications. Trust in Diodes Incorporated to deliver cutting-edge technology that exceeds expectations and adds value to your projects. Upgrade to the SD1A220G today and experience the difference!

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the circuit design and makes installation easier.

Nominal Holding Current: 200 mA

A higher holding current ensures stability in operation and better performance.

Package Shape: ROUND

Round package shape allows for easy mounting and reduces the risk of damage during installation.

Terminal Form: WIRE

Wire terminals provide a secure connection and flexibility in wiring arrangements.

No. of Terminals: 2

Two terminals simplify the connection process and reduce the chances of errors.

Package Style (Meter): LONG FORM

Long form package style allows for better heat dissipation and overall durability.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in a variety of environments.

Trigger Device Type: SIDAC

SIDAC trigger device type offers precise triggering and control for optimized performance.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in colder environments without issues.

Terminal Position: AXIAL

Axial terminal position makes it easy to install and maintain the diode in the circuit.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents electrical interference issues.

Maximum Breakdown Voltage: 240 V

High breakdown voltage ensures protection against voltage spikes and surges.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) SD1A220G attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

240 V

Case Connection:

Configuration:

Nominal Holding Current:

200 mA

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-XALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

SD1A220G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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