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SD1A210GW

Diodes Incorporated

SD1A210GW by Diodes Incorporated

SD1A210GW by Diodes Incorporated is a SIDAC diode with 16A peak current and 65mA holding current. It operates b/w -40°C to 125°C, with a breakdown voltage of 226V. Ideal for AC applications requiring reliable triggering at specific voltages.

Median Price

$0.356

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,000 parts In-Stock

1+ parts

$0.610

100+ parts

$0.241

1k+ parts

$0.163

10k+ parts

$0.122

4,000

$0.610

$0.241

$0.163

$0.122

Verical

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

40,000

-

-

-

$0.101

Overview

Unleash the power of the SD1A210GW Silicone Diode for Alternating Current by Diodes Incorporated! With a reputation for top-tier quality and reliability, Diodes Incorporated delivers cutting-edge technology in every product. The SD1A210GW offers unmatched performance in a wide range of applications, providing customers with superior value and benefits. Experience the advantages of this SIDAC trigger device, from its high non-repetitive peak on-state current to its durable terminal form. Trust Diodes Incorporated to elevate your electronic projects to new heights with the SD1A210GW.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes the SIDAC simple to install and use, ideal for applications where only one SIDAC is needed.

Non Repetitive Peak On-state Current: 16 A

With a high non repetitive peak on-state current, this SIDAC is capable of handling surge currents effectively, making it reliable in high voltage applications.

Nominal Holding Current: 65 mA

The low nominal holding current ensures the SIDAC remains in the on-state even with minimal current flow, providing stability in operation.

Package Shape: ROUND

The round package shape allows for easy mounting and secure placement in electronic circuits.

Terminal Form: WIRE

The wire terminal form facilitates easy connection to other components, enhancing the SIDAC's usability.

No. of Terminals: 2

With only two terminals, the SIDAC simplifies circuit design and reduces the risk of errors in installation.

Package Style (Meter): LONG FORM

The long form package style provides additional space for heat dissipation, ensuring the SIDAC operates efficiently even at high temperatures.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the SIDAC to be used in a wide range of environments without the risk of overheating.

Trigger Device Type: SIDAC

As a SIDAC trigger device type, this product offers reliable switching performance and longevity in demanding applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the SIDAC can function effectively in cold environments without performance degradation.

Terminal Position: AXIAL

The axial terminal position enables easy installation and secure connection within the circuit layout.

Case Connection: ISOLATED

The isolated case connection enhances safety and prevents electrical interference, ensuring the SIDAC's stability in operation.

Maximum Breakdown Voltage: 226 V

With a high maximum breakdown voltage, this SIDAC can withstand higher voltages, making it suitable for high voltage applications.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) SD1A210GW attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

226 V

Case Connection:

Configuration:

Nominal Holding Current:

65 mA

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-XALF-W2

Non Repetitive Peak On-state Current:

16 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

SD1A210GW Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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