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SBM340-13-F

Diodes Incorporated

SBM340-13-F by Diodes Incorporated

SBM340-13-F by Diodes Inc. is a Schottky rectifier diode with max forward voltage of 0.44V and max output current of 3A. It operates b/w -55 to 125°C, ideal for efficiency applications. This single-configured diode comes in a small outline package suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,597 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 90 parts In-Stock

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90

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Ampacity Inc.

Singapore . 419 parts In-Stock

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$3.010

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419

$3.010

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AZTECH Wire

Italy . 815 parts In-Stock

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$10.691

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815

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Kepictronics

USA . 56,000 parts In-Stock

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Lixinc

USA . 16,875 parts In-Stock

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Argo Parts USA

USA . 5,217 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,945 parts In-Stock

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Continental Prestige Electronics

USA . 3,014 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

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Aranea Global

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Overview

Experience the superior quality and reliability of Diodes Incorporated with the SBM340-13-F Schottky rectifier diode. This small outline, surface-mount diode offers efficient performance and a maximum output current of 3A, making it ideal for a range of applications requiring high efficiency. With a maximum repetitive peak reverse voltage of 40V and a maximum forward voltage of 0.44V, this diode provides excellent value and benefits to customers looking for a reliable solution for their electronic projects. Trust in the expertise of Diodes Incorporated and enhance your designs with the SBM340-13-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Config: SINGLE

Simplified design with a single configuration for easy installation and maintenance.

Surface Mount: YES

Ideal for compact and space-constrained applications, making installation easier.

Package Shape: RECTANGULAR

Efficient use of space and easy to integrate into circuit design.

No. of Terminals: 2

Simple connection with only two terminals, reducing installation complexity.

Package Style (Meter): SMALL OUTLINE

Saves space on the circuit board and allows for a more streamlined design.

Application: EFFICIENCY

Designed for high efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various operating environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in low temperatures, providing versatility in usage.

Terminal Finish: MATTE TIN

Improves solderability and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplified installation with a single terminal position design.

Case Connection: CATHODE

Clear indication of the cathode connection for proper installation.

Maximum Forward Voltage (VF): 0.44 V

Low forward voltage drop for efficient conduction.

Maximum Output Current: 3 A

High output current capability for demanding applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring reliable performance.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low power loss.

Terminal Form: GULL WING

Gull wing design for easy surface mounting and secure solder connections.

Maximum Repetitive Peak Reverse Voltage: 40 V

Capable of handling high reverse voltages, suitable for a wide range of applications.

Maximum Non Repetitive Peak Forward Current: 50 A

Can handle high peak forward currents for short durations, ensuring reliability.

Diode Element Material: SILICON

Silicon material offers excellent electrical properties for optimal diode performance.

Technical Specifications

Diodes & Rectifiers SBM340-13-F attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.44 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBM340-13-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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