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SBM30-03

Onsemi

SBM30-03 by Onsemi

SBM30-03 by Onsemi is a Schottky rectifier diode with max VF of 0.4V and max output current of 2.1A. Operating at up to 150 °C, it has a max reverse voltage of 30V and non-repetitive forward current of 30A. Ideal for applications requiring high efficiency power conversion in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,365 parts In-Stock

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Vyrian

USA . 400 parts In-Stock

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400

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Assy Fe

Spain . 22,500 parts In-Stock

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22,500

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TANS Electronics

Latvia . 6,862 parts In-Stock

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Kulean Microsystems

USA . 6,848 parts In-Stock

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Problanco Electronics

Mexico . 5,670 parts In-Stock

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SupplyDigital Components

Austria . 3,452 parts In-Stock

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Corphita

USA . 1,782 parts In-Stock

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UHIMA Technologies

Türkiye . 631 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Unleash the power of innovation with the SBM30-03 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are trusted by professionals worldwide. The SBM30-03 offers unmatched performance and reliability, making it ideal for a wide range of applications. From consumer electronics to industrial machinery, this SCHOTTKY technology diode provides maximum output current and forward voltage, ensuring efficient operation. Elevate your projects with the SBM30-03 and experience the value and benefits that Onsemi brings to every customer.

Feature Benefit Bullets

Config: SINGLE

This single configuration makes the product easy to install and use without worrying about multiple connections.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into various electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand heat and operate efficiently in various environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC efficiently in electronic circuits.

Maximum Forward Voltage (VF): 0.4 V

The low forward voltage drop of 0.4V ensures minimal power loss and efficient energy conversion.

Maximum Output Current: 2.1 A

With a maximum output current of 2.1A, this product can handle a decent amount of current flow without overheating.

Technology: SCHOTTKY

Schottky technology results in faster switching speeds, lower forward voltage drop, and higher efficiency compared to standard diodes.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage of 30V provides protection against reverse voltage spikes, ensuring the durability of the product.

Maximum Non Repetitive Peak Forward Current: 30 A

The high maximum non-repetitive peak forward current of 30A allows the product to handle short-term surges in current flow without damage.

Technical Specifications

Diodes & Rectifiers SBM30-03 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.4 V

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2.1 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SBM30-03 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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