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MBR20200CT-LJ

Diodes Incorporated

MBR20200CT-LJ by Diodes Incorporated

MBR20200CT-LJ by Diodes Inc. is a Schottky rectifier diode with 200V peak reverse voltage and 10A output current. Common cathode configuration, suitable for automotive applications due to AEC-Q101 standard compliance and -55°C to 175°C operating temperature range. Ideal for high-power rectification needs in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 17,532 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Euro-Tech

UK . 8 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 125 parts In-Stock

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$0.058

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125

$0.058

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Aztec Data Supply Inc.

USA . 326 parts In-Stock

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$0.190

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326

$0.190

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Semicontronic

India . 1,625 parts In-Stock

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$1.010

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$0.985

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$0.980

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1,625

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 1,183 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 606 parts In-Stock

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$15.271

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606

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,355 parts In-Stock

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Perfect Parts

USA . 8,456 parts In-Stock

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Continental Prestige Electronics

USA . 2,029 parts In-Stock

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Argo Parts USA

USA . 1,594 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the superior quality of the MBR20200CT-LJ by Diodes Incorporated, a leading manufacturer in the field of diodes and rectifiers. This versatile component offers unparalleled reliability and efficiency for a wide range of applications. Its common cathode configuration and Schottky technology ensure optimal performance, with a maximum output current of 10 A and a maximum reverse voltage of 200 V. Experience the value and benefits that this product brings to your projects, providing seamless functionality and peace of mind. Elevate your designs with the MBR20200CT-LJ and unleash its full potential today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and resistant to impact, making it suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and easy integration into circuit designs.

Maximum Reverse Current: 100 uA

Low maximum reverse current ensures minimal power loss and improved efficiency.

Package Shape: RECTANGULAR

Rectangular shape provides versatility in mounting options and space-saving benefits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments without performance degradation.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable performance even in harsh environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for long-lasting performance.

Maximum Forward Voltage (VF): 0.89 V

Low maximum forward voltage drop results in less power dissipation and higher efficiency.

Maximum Output Current: 10 A

High maximum output current capability allows for handling of high power loads without breakdown.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and reduced power dissipation compared to standard diodes, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage ensures reliable operation and protection against reverse voltage spikes.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and high breakdown voltage for robust performance.

Technical Specifications

Diodes & Rectifiers MBR20200CT-LJ attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

100 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR20200CT-LJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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