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GBJ810-F

Diodes Incorporated

GBJ810-F by Diodes Incorporated

GBJ810-F by Diodes Inc. is a bridge rectifier diode with 4 elements, capable of handling up to 8A output current and 1000V breakdown voltage. It is designed for applications requiring high reliability in a wide temperature range (-65°C to 150°C), making it suitable for industrial power supplies and motor drives.

Median Price

$2.760

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 311 parts In-Stock

1+ parts

$2.760

100+ parts

-

1k+ parts

$1.030

10k+ parts

-

311

$2.760

-

$1.030

-

DigiKey

USA . 72 parts In-Stock

1+ parts

$2.760

100+ parts

$1.665

1k+ parts

$0.991

10k+ parts

$0.853

72

$2.760

$1.665

$0.991

$0.853

Verical

USA . 795 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.910

10k+ parts

-

795

-

-

$0.910

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NexGen Digital

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 780 parts In-Stock

1+ parts

$1.680

100+ parts

-

1k+ parts

-

10k+ parts

-

780

$1.680

-

-

-

Northwest PG Solutions

USA . 2,312 parts In-Stock

1+ parts

$1.848

100+ parts

-

1k+ parts

-

10k+ parts

-

2,312

$1.848

-

-

-

Component Stockers USA

USA . 376 parts In-Stock

1+ parts

$1.970

100+ parts

$1.750

1k+ parts

-

10k+ parts

-

376

$1.970

$1.750

-

-

Microchip USA

USA . 9,889 parts In-Stock

1+ parts

$13.065

100+ parts

-

1k+ parts

-

10k+ parts

-

9,889

$13.065

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,000

-

-

-

-

Overview

Experience the high-quality performance of the GBJ810-F Bridge Rectifier Diode by Diodes Incorporated. As a trusted manufacturer in the industry, Diodes Incorporated offers reliable products that are designed to meet your needs. The GBJ810-F is perfect for a wide range of applications, providing efficient power conversion and protection. With its impressive specifications and UL recognition, this diode ensures stability and durability for your projects. Trust in the value and benefits of the GBJ810-F for all your rectification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and resistance to environmental factors, making the diode reliable for long-term use.

Config: BRIDGE, 4 ELEMENTS

The bridge configuration with 4 elements allows for efficient rectification of alternating current (AC) to direct current (DC), making it suitable for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C enables the diode to function effectively in harsh cold environments.

Maximum Output Current: 8 A

The high maximum output current of 8A allows for the diode to handle heavy loads and provide a stable output.

Technical Specifications

Bridge Rectifier Diodes GBJ810-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ810-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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