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GBJ801-F

Diodes Incorporated

GBJ801-F by Diodes Incorporated

GBJ801-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 8A, and max repetitive peak reverse voltage of 100V. It is used in applications requiring rectification of AC to DC power such as power supplies and motor drives due to its high efficiency and UL recognition.

Median Price

$1.505

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4 parts In-Stock

1+ parts

$2.380

100+ parts

-

1k+ parts

$0.957

10k+ parts

$0.749

4

$2.380

-

$0.957

$0.749

Verical

USA . 540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

540

-

-

$0.630

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 290 parts In-Stock

1+ parts

-

100+ parts

$1.398

1k+ parts

$0.839

10k+ parts

-

290

-

$1.398

$0.839

-

Dan-Mar Components

USA . 290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

290

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 558 parts In-Stock

1+ parts

$0.979

100+ parts

-

1k+ parts

-

10k+ parts

-

558

$0.979

-

-

-

Northwest PG Solutions

USA . 2,340 parts In-Stock

1+ parts

$1.077

100+ parts

-

1k+ parts

-

10k+ parts

-

2,340

$1.077

-

-

-

Component Stockers USA

USA . 774 parts In-Stock

1+ parts

$1.540

100+ parts

$0.980

1k+ parts

-

10k+ parts

-

774

$1.540

$0.980

-

-

Microchip USA

USA . 7,212 parts In-Stock

1+ parts

$10.470

100+ parts

$10.400

1k+ parts

$10.370

10k+ parts

$10.340

7,212

$10.470

$10.400

$10.370

$10.340

Perfect Parts

USA . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120

-

-

-

-

Overview

Looking for a reliable and efficient solution for your bridge rectification needs? Look no further than the GBJ801-F by Diodes Incorporated. With a reputation for quality and innovation, Diodes Incorporated delivers cutting-edge technology in the form of this bridge rectifier diode. Perfect for a variety of applications, this product offers customers unparalleled value, benefits, and advantages. Trust Diodes Incorporated to provide you with the best in bridge rectifier diodes, ensuring optimal performance and reliability for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the bridge rectifier diodes lightweight and durable, ideal for various electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and mounting in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, these bridge rectifier diodes can withstand a wide range of operating conditions.

Minimum Breakdown Voltage: 100 V

The minimum breakdown voltage of 100V ensures reliable performance and protection against excessive voltage levels.

Maximum Output Current: 8 A

With a maximum output current of 8A, these bridge rectifier diodes are suitable for handling medium to high power applications.

Technical Specifications

Bridge Rectifier Diodes GBJ801-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

100 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ801-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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